Invention Grant
- Patent Title: Phase transition memories and transistors
- Patent Title (中): 相变存储器和晶体管
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Application No.: US13322379Application Date: 2010-05-28
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Publication No.: US08987701B2Publication Date: 2015-03-24
- Inventor: Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
- Applicant: Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
- Applicant Address: US NY Ithaca
- Assignee: Cornell University
- Current Assignee: Cornell University
- Current Assignee Address: US NY Ithaca
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent George S. Blasiak, Esq.
- International Application: PCT/US2010/036667 WO 20100528
- International Announcement: WO2010/138876 WO 20101202
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/68 ; H01L29/51

Abstract:
In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.
Public/Granted literature
- US20120280301A1 PHASE TRANSITION MEMORIES AND TRANSISTORS Public/Granted day:2012-11-08
Information query
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