Invention Grant
- Patent Title: Semiconductor light-emitting device and manufacturing method of the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13607480Application Date: 2012-09-07
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Publication No.: US08987762B2Publication Date: 2015-03-24
- Inventor: Toshiya Nakayama , Kazuhito Higuchi , Hiroshi Koizumi , Hideo Nishiuchi , Susumu Obata , Akiya Kimura , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
- Applicant: Toshiya Nakayama , Kazuhito Higuchi , Hiroshi Koizumi , Hideo Nishiuchi , Susumu Obata , Akiya Kimura , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2011-218756 20110930; JP2012-078364 20120329
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/56 ; H01L33/54
Abstract:
According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.
Public/Granted literature
- US20130082294A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2013-04-04
Information query
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