发明授权
US08987798B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
有权
磁隧道结设备，存储器，存储器系统和电子设备
- 专利标题： Magnetic tunneling junction devices, memories, memory systems, and electronic devices
- 专利标题（中）： 磁隧道结设备，存储器，存储器系统和电子设备
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申请号： US14306792申请日： 2014-06-17
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公开(公告)号： US08987798B2公开(公告)日： 2015-03-24
- 发明人: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- 申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0079627 20110810
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/08 ; H01L43/10 ; G06F13/16
摘要：
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
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