Invention Grant
- Patent Title: Semiconductor memory device and refresh leveraging driving method thereof
- Patent Title (中): 半导体存储器件及其更新利用驱动方法
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Application No.: US14071757Application Date: 2013-11-05
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Publication No.: US08988964B2Publication Date: 2015-03-24
- Inventor: Dae-Jeong Kim , Kabyong Kim , Kwang-Woo Lee , Heon Lee , Inho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0130381 20121116
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/406 ; G11C16/34 ; G11C29/00

Abstract:
A refresh leveraging driving method is provided which includes deciding a unit of word lines to be driven at a refresh leveraging operation to be the same as a redundancy repair row unit setting a lower row address of an input refresh leveraging address corresponding to the decided refresh leveraging row driving unit to a don't care state; and internally generating the don't care lower row address of the refresh leveraging address to drive word lines according to a combined refresh leveraging address.
Public/Granted literature
- US20140140154A1 SEMICONDUCTOR MEMORY DEVICE AND REFRESH LEVERAGING DRIVING METHOD THEREOF Public/Granted day:2014-05-22
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