公开(公告)号：US09076549B2

公开(公告)日：2015-07-07

申请号：US14213566

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Jeong Kim ,  Kab Yong Kim ,  Kwang Woo Lee ,  Heon Lee ,  In Ho Cho

IPC: G11C11/406 ,  G11C29/00

CPC classification number: G11C11/40618 ,  G11C11/40603 ,  G11C29/70 ,  G11C29/783 ,  G11C2211/4061

Abstract: A semiconductor memory device includes: a normal memory cell block including a first plurality of memory cells; a redundancy memory cell block including a second plurality of memory cells and configured for use in replacing memory cells of the normal memory cell block; a weak cell information storage configured to store information regarding weak memory cells in the normal and redundancy memory cell blocks; and a refresh control circuit configured to control a refresh rate of memory cells in the normal and redundancy memory cell blocks based on the information regarding weak memory cells in the weak cell information storage. The weak memory cells in the normal and redundancy memory cell blocks are refreshed at least once more than other memory cells in the normal and redundancy memory cell blocks during a refresh cycle.

Abstract translation: 半导体存储器件包括：包括第一多个存储器单元的正常存储器单元块; 包括第二多个存储单元并被配置为用于替换正常存储器单元块的存储单元的冗余存储单元块; 弱电池信息存储器，被配置为存储关于正常和冗余存储器单元块中的弱存储器单元的信息; 以及刷新控制电路，被配置为基于关于弱小区信息存储器中的弱存储器单元的信息来控制正常和冗余存储器单元块中的存储器单元的刷新率。 在刷新周期期间，正常和冗余存储单元块中的弱存储器单元至少比正常和冗余存储器单元块中的其它存储器单元更新一次。

公开(公告)号：US08988964B2

公开(公告)日：2015-03-24

申请号：US14071757

申请日：2013-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Jeong Kim ,  Kabyong Kim ,  Kwang-Woo Lee ,  Heon Lee ,  Inho Cho

IPC: G11C7/22 ,  G11C11/406 ,  G11C16/34 ,  G11C29/00

CPC classification number: G11C11/40603 ,  G11C11/406 ,  G11C16/3418 ,  G11C29/82 ,  G11C2211/4063

Abstract: A refresh leveraging driving method is provided which includes deciding a unit of word lines to be driven at a refresh leveraging operation to be the same as a redundancy repair row unit setting a lower row address of an input refresh leveraging address corresponding to the decided refresh leveraging row driving unit to a don't care state; and internally generating the don't care lower row address of the refresh leveraging address to drive word lines according to a combined refresh leveraging address.

Abstract translation: 提供了一种刷新利用驱动方法，其包括将刷新利用操作中要驱动的字线的单位确定为与冗余修复行单元相同的冗余修复行单元，该冗余修复行单元设置与所决定的刷新利用相对应的输入刷新利用地址的较低行地址 行驱动单位到不关心状态; 并且根据组合的刷新利用地址在内部生成不关心刷新利用地址的较低行地址来驱动字线。

公开(公告)号：US09129702B2

公开(公告)日：2015-09-08

申请号：US14336337

申请日：2014-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jeong Kim ,  Heon Lee ,  Hoon-Chang Yang ,  Kwang-Woo Lee

IPC: G11C7/00 ,  G11C11/406 ,  G11C29/02

CPC classification number: G11C11/406 ,  G11C11/40615 ,  G11C11/40618 ,  G11C11/40622 ,  G11C29/02 ,  G11C2211/4065 ,  G11C2211/4068

Abstract: A method is provided for refreshing a volatile memory. The method includes storing address information about a weak cell row address that is to be refreshed according to a weak cell refresh period that is shorter than a refresh period, performing a counting operation for generating a refresh row address, comparing the refresh row address with the address information, refreshing the weak cell row address when a result of the comparison shows that the refresh row address and the weak cell row address of the address information coincide with each other, changing the weak cell row address by changing a pointer of the address information, and refreshing the changed weak cell row address according to the weak cell refresh period.

Abstract translation: 提供了一种刷新易失性存储器的方法。 该方法包括根据短于刷新周期的弱小区刷新周期来存储关于要更新的​​弱小区行地址的地址信息，执行用于生成刷新行地址的计数操作，将刷新行地址与 地址信息，当比较结果表明地址信息的刷新行地址和弱单元行地址彼此一致时刷新弱单元行地址，通过改变地址信息的指针来改变弱单元行地址 ，并且根据弱小区刷新周期刷新改变的弱小区行地址。