Invention Grant
- Patent Title: Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same
- Patent Title (中): 超发光二极管,其制造方法和包括其的波长可调谐外腔激光器
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Application No.: US13486698Application Date: 2012-06-01
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Publication No.: US08989229B2Publication Date: 2015-03-24
- Inventor: Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-seok Choi , Jongbae Kim
- Applicant: Su Hwan Oh , Ki-Hong Yoon , Kisoo Kim , O-Kyun Kwon , Oh Kee Kwon , Byung-seok Choi , Jongbae Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0053198 20110602
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/026 ; H01S5/14 ; H01L33/20 ; H01S5/022 ; H01S5/062 ; H01S5/10 ; H01S5/223 ; H01S5/343 ; H01L33/00 ; G02B6/30 ; G02B6/42

Abstract:
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
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