Invention Grant
- Patent Title: High-K heterostructure
- Patent Title (中): 高K异质结构
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Application No.: US13832373Application Date: 2013-03-15
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Publication No.: US08994109B2Publication Date: 2015-03-31
- Inventor: Clement Merckling , Mario El-Kazzi , Guillaume Saint-Girons , Guy Hollinger
- Applicant: Clement Merckling , Mario El-Kazzi , Guillaume Saint-Girons , Guy Hollinger
- Applicant Address: FR Montrouge FR Paris Cedex FR Ecully Cedex
- Assignee: STMicroelectronics SA,Centre National de la Recherche Scientifique,Ecole Centrale de Lyon
- Current Assignee: STMicroelectronics SA,Centre National de la Recherche Scientifique,Ecole Centrale de Lyon
- Current Assignee Address: FR Montrouge FR Paris Cedex FR Ecully Cedex
- Agency: Gardere Wynne Sewell LLP
- Priority: WOPCT/IB2007/003415 20070828
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L29/51 ; H01L21/02 ; H01L21/314 ; H01L29/04 ; H01L21/316 ; H01L21/28
Abstract:
A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
Public/Granted literature
- US20130200440A1 HIGH-K HETEROSTRUCTURE Public/Granted day:2013-08-08
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