Invention Grant
- Patent Title: Radiation-hardened memory storage unit
- Patent Title (中): 辐射硬化存储单元
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Application No.: US14135617Application Date: 2013-12-20
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Publication No.: US08995162B2Publication Date: 2015-03-31
- Inventor: Hongshi Sang , Wen Wang , Tianxu Zhang , Chaobing Liang , Jing Zhang , Yang Xie , Yajing Yuan
- Applicant: Huazhong University of Science and Technology
- Applicant Address: CN Wuhan
- Assignee: Huazhong University of Science and Technology
- Current Assignee: Huazhong University of Science and Technology
- Current Assignee Address: CN Wuhan
- Agency: Matthias Scholl P.C.
- Agent Matthias Scholl
- Priority: CN201310398912 20130904
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A radiation-hardened memory storage unit that is resistant to total ionizing done effects, the unit including PMOS transistors.
Public/Granted literature
- US20150062994A1 RADIATION-HARDENED MEMORY STORAGE UNIT Public/Granted day:2015-03-05
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