发明授权
US08995173B1 Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
有权
具有动态存储元件和可编程阻抗阴影元件的存储单元，器件和方法
- 专利标题： Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
- 专利标题（中）： 具有动态存储元件和可编程阻抗阴影元件的存储单元，器件和方法
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申请号： US13603373申请日： 2012-09-04
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公开(公告)号： US08995173B1公开(公告)日： 2015-03-31
- 发明人: Narbeh Derhacobian
- 申请人： Narbeh Derhacobian
- 申请人地址： US CA Sunnyvale
- 专利权人： Adesto Technologies Corporation
- 当前专利权人： Adesto Technologies Corporation
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C11/24
- IPC分类号： G11C11/24 ; G11C11/401
摘要：
A memory device can include a plurality of memory cells, each including a dynamic section configured to store data dynamically, and a programmable impedance section comprising at least one programmable element programmable between at least two different data states, the programmable impedance section configured to establish a data value stored by the dynamic section in response to a recall signal.