Invention Grant
US08999106B2 Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
有权
用于控制电感耦合等离子体室中边缘性能的装置和方法
- Patent Title: Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
- Patent Title (中): 用于控制电感耦合等离子体室中边缘性能的装置和方法
-
Application No.: US11960300Application Date: 2007-12-19
-
Publication No.: US08999106B2Publication Date: 2015-04-07
- Inventor: Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
- Applicant: Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/00 ; C23F1/00 ; H01L21/306 ; H01L21/687 ; H01J37/32 ; H01L21/67
Abstract:
The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
Public/Granted literature
- US20090162952A1 APPARATUS AND METHOD FOR CONTROLLING EDGE PERFORMANCE IN AN INDUCTIVELY COUPLED PLASMA CHAMBER Public/Granted day:2009-06-25
Information query
IPC分类:
