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    Gas distribution system
    1.
    发明授权
    Gas distribution system 有权
    燃气分配系统

    公开(公告)号：US09206512B2

    公开(公告)日：2015-12-08

    申请号：US13528906

    申请日：2012-06-21

    Applicant: Hanh D. Nguyen ,  Majeed A. Foad ,  Dieter Haas ,  Karl J. Armstrong ,  Xiaoxiong Yuan

    Inventor： Hanh D. Nguyen ,  Majeed A. Foad ,  Dieter Haas ,  Karl J. Armstrong ,  Xiaoxiong Yuan

    IPC: C23C16/455 ,  F17D1/00

    CPC classification number: C23C16/455 ,  C23C16/45565 ,  F17D1/00 ,  Y10T137/8593

    Abstract: In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.

    Abstract translation: 在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面与通孔的内表面第一距离设置 形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中， 淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。

    Method of correcting baseline skew by a novel motorized source coil assembly
    2.
    发明授权
    Method of correcting baseline skew by a novel motorized source coil assembly 有权
    通过新颖的电动源线圈组件校正基线偏斜的方法

    公开(公告)号：US08062472B2

    公开(公告)日：2011-11-22

    申请号：US11960246

    申请日：2007-12-19

    Applicant: Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    Inventor： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC: C23C16/00 ,  H01L21/306

    CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

    Abstract translation: 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供了一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

    Dual zone gas injection nozzle
    3.
    发明授权
    Dual zone gas injection nozzle 有权
    双区气体喷嘴

    公开(公告)号：US08137463B2

    公开(公告)日：2012-03-20

    申请号：US11960166

    申请日：2007-12-19

    Applicant: Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    Inventor： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC classification number: H01J37/3244 ,  H01J37/32449

    Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    Abstract translation: 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    4.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
    CVD气泡流量控制特征

    公开(公告)号：US20110011338A1

    公开(公告)日：2011-01-20

    申请号：US12836726

    申请日：2010-07-15

    Applicant: Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC: C23C16/00

    CPC classification number: C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    Abstract translation: 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

    DUAL ZONE GAS INJECTION NOZZLE
    5.
    发明申请
    DUAL ZONE GAS INJECTION NOZZLE 有权
    双区气体喷射喷嘴

    公开(公告)号：US20090159424A1

    公开(公告)日：2009-06-25

    申请号：US11960166

    申请日：2007-12-19

    Applicant: Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    Inventor： Wei Liu ,  Johanes S. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC: H05H1/24 ,  B01J19/08

    CPC classification number: H01J37/3244 ,  H01J37/32449

    Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.

    Abstract translation: 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

    GAS DISTRIBUTION SYSTEM
    6.
    发明申请
    GAS DISTRIBUTION SYSTEM 有权
    气体分配系统

    公开(公告)号：US20120325149A1

    公开(公告)日：2012-12-27

    申请号：US13528906

    申请日：2012-06-21

    Applicant: HANH D. NGUYEN ,  MAJEED A. FOAD ,  DIETER HAAS ,  KARL J. ARMSTRONG ,  XIAOXIONG YUAN

    Inventor： HANH D. NGUYEN ,  MAJEED A. FOAD ,  DIETER HAAS ,  KARL J. ARMSTRONG ,  XIAOXIONG YUAN

    IPC: C23C16/455 ,  F17D1/00

    CPC classification number: C23C16/455 ,  C23C16/45565 ,  F17D1/00 ,  Y10T137/8593

    Abstract: In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.

    Abstract translation: 在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面设置在距通孔内表面的第一距离处 形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中， 淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。

    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY
    7.
    发明申请
    METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 有权
    通过新型电动机线圈组件校正基线的方法

    公开(公告)号：US20090159425A1

    公开(公告)日：2009-06-25

    申请号：US11960246

    申请日：2007-12-19

    Applicant: Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    Inventor： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

    IPC: H05H1/24

    CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32174

    Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

    Abstract translation: 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供了一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

    Prevention of ground fault interrupts in a semiconductor processing system
    9.
    发明授权
    Prevention of ground fault interrupts in a semiconductor processing system 失效
    防止半导体处理系统中的接地故障中断

    公开(公告)号：US6110322A

    公开(公告)日：2000-08-29

    申请号：US036536

    申请日：1998-03-06

    Applicant: Hong Bee Teoh ,  James Jin-Long Chen ,  Cuong C. Nguyen ,  Hanh D. Nguyen

    Inventor： Hong Bee Teoh ,  James Jin-Long Chen ,  Cuong C. Nguyen ,  Hanh D. Nguyen

    IPC: H05B3/00 ,  C23C16/46 ,  C23C16/511 ,  C23F1/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/68 ,  H01L21/683

    CPC classification number: H01L21/67103 ,  C23C16/4586 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68785

    Abstract: A pedestal heating system provided for heating a pedestal disposed in the processing chamber of a substrate processing system. A pedestal heating system according to the present invention includes: a heater power supply, a transformer, coupled to the heater power supply, a heater element coupled to the transformer, and an RF ground electrode. The transformer is configured to reduce leakage current from the heater element to various elements of the substrate processing system by localizing current leakage loops. The heater element and RF ground electrode are disposed within the pedestal. Preferably, the transformer is simply an isolation transformer. Where an RF energy source is used, such as in a plasma CVD processing system, an EMI filter may be coupled between the transformer and the heater element, or at another point in the power supply chain to prevent feed-through of RF energy to other of the substrate processing system's subsystems, or other sensitive electronic circuitry coupled to the facility's power supply.

    Abstract translation: 一种基座加热系统，用于加热设置在基板处理系统的处理室中的基座。 根据本发明的基座加热系统包括：耦合到加热器电源的加热器电源，变压器，耦合到变压器的加热器元件和RF接地电极。 变压器被配置为通过定位电流泄漏回路来减少从加热元件到基板处理系统的各种元件的泄漏电流。 加热器元件和RF接地电极设置在基座内。 优选地，变压器仅仅是隔离变压器。 在诸如在等离子体CVD处理系统中使用RF能量源的地方，EMI滤波器可以耦合在变压器和加热器元件之间，或者在电源链中的另一点处，以防止将RF能量馈送到其它 的衬底处理系统的子系统或耦合到设施的电源的其他敏感电子电路。

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