发明授权
- 专利标题： Semiconductor structure with substitutional boron and method for fabrication thereof
- 专利标题（中）： 具有替代硼的半导体结构及其制造方法
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申请号： US13469249申请日： 2012-05-11
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公开(公告)号： US08999861B1公开(公告)日： 2015-04-07
- 发明人: Lance Scudder , Pushkar Ranade , Charles Stager , Lucian Shifren , Dalong Zhao , U.C. Sridharan , Michael Duane
- 申请人： Lance Scudder , Pushkar Ranade , Charles Stager , Lucian Shifren , Dalong Zhao , U.C. Sridharan , Michael Duane
- 申请人地址： US CA Los Gatos
- 专利权人： SuVolta, Inc.
- 当前专利权人： SuVolta, Inc.
- 当前专利权人地址： US CA Los Gatos
- 代理商 Charles S. Fish
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02
摘要：
A method for fabricating a semiconductor structure so as to have reduced junction leakage is disclosed. The method includes providing substitutional boron in a semiconductor substrate. The method includes preparing the substrate using a pre-amorphization implant and a carbon implant followed by a recrystallization step and a separate defect repair/activation step. Boron is introduced to the pre-amorphized region preferably by ion implantation.
公开/授权文献
- US2820439A Furnace structures 公开/授权日：1958-01-21
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