公开(公告)号：US08999861B1

公开(公告)日：2015-04-07

申请号：US13469249

申请日：2012-05-11

申请人： Lance Scudder ,  Pushkar Ranade ,  Charles Stager ,  Lucian Shifren ,  Dalong Zhao ,  U.C. Sridharan ,  Michael Duane

发明人： Lance Scudder ,  Pushkar Ranade ,  Charles Stager ,  Lucian Shifren ,  Dalong Zhao ,  U.C. Sridharan ,  Michael Duane

IPC分类号： H01L29/78 ,  H01L21/02

CPC分类号： H01L21/02205 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/105 ,  H01L29/6659

摘要： A method for fabricating a semiconductor structure so as to have reduced junction leakage is disclosed. The method includes providing substitutional boron in a semiconductor substrate. The method includes preparing the substrate using a pre-amorphization implant and a carbon implant followed by a recrystallization step and a separate defect repair/activation step. Boron is introduced to the pre-amorphized region preferably by ion implantation.

摘要翻译： 公开了一种用于制造半导体结构以减少结漏电的方法。 该方法包括在半导体衬底中提供取代的硼。 该方法包括使用预非晶化植入物和碳注入制备底物，接着进行重结晶步骤和单独的缺陷修复/活化步骤。 优选通过离子注入将硼引入到非晶化区域中。

公开(公告)号：US20070120625A1

公开(公告)日：2007-05-31

申请号：US11291674

申请日：2005-11-30

申请人： John Larson ,  John Choy ,  Donald Lee ,  Kevin Grannen ,  Hongjun Feng ,  Carrie Rogers ,  U.C. Sridharan

发明人： John Larson ,  John Choy ,  Donald Lee ,  Kevin Grannen ,  Hongjun Feng ,  Carrie Rogers ,  U.C. Sridharan

IPC分类号： H03H9/58

CPC分类号： H03H3/04 ,  H03H9/02102 ,  H03H9/131 ,  H03H9/132 ,  H03H9/173 ,  H03H9/584 ,  H03H9/587 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/0407

摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.

摘要翻译： 温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠，其包括以具有温度系数的谐振频率和包含掺杂二氧化硅的温度补偿层为特征的FBAR。 FBAR包括相对的平面电极和电极之间的压电元件。 压电元件具有温度系数，FBAR的谐振频率的温度系数至少部分地取决于该温度系数。