发明授权
- 专利标题： Semiconductor structure and fabrication method thereof
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US13244948申请日： 2011-09-26
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公开(公告)号： US09000568B2公开(公告)日： 2015-04-07
- 发明人: Szu-Hao Lai , Yu-Ren Wang , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Te-Lin Sun
- 申请人： Szu-Hao Lai , Yu-Ren Wang , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Te-Lin Sun
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L21/28 ; H01L29/66
摘要：
A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.
公开/授权文献
- US20130075874A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 公开/授权日：2013-03-28
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