Invention Grant
US09000580B2 Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate
有权
具有压制基板的功率半导体模块和用于生产具有压制基板的功率半导体模块的方法
- Patent Title: Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate
- Patent Title (中): 具有压制基板的功率半导体模块和用于生产具有压制基板的功率半导体模块的方法
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Application No.: US13749884Application Date: 2013-01-25
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Publication No.: US09000580B2Publication Date: 2015-04-07
- Inventor: Torsten Groening , Mark Essert , Christian Steininger , Roman Lennart Tschirbs
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102012201172 20120127
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L23/40 ; H01L21/50 ; H01L23/36 ; H01L23/373 ; H01L21/48 ; H01L23/31
Abstract:
A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.
Public/Granted literature
Information query
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