公开(公告)号：US10283447B1

公开(公告)日：2019-05-07

申请号：US15795077

申请日：2017-10-26

Applicant: Infineon Technologies AG

Inventor： Torsten Groening ,  Thomas Nuebel ,  Reinhold Spanke

IPC: H01L23/50 ,  H01L25/07 ,  H01L21/48 ,  H01L25/00 ,  H01L23/055

Abstract: A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

公开(公告)号：US20190131234A1

公开(公告)日：2019-05-02

申请号：US15795077

申请日：2017-10-26

Applicant: Infineon Technologies AG

Inventor： Torsten Groening ,  Thomas Nuebel ,  Reinhold Spanke

IPC: H01L23/50 ,  H01L25/07 ,  H01L23/055 ,  H01L25/00 ,  H01L21/48

Abstract: A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

公开(公告)号：US20130193591A1

公开(公告)日：2013-08-01

申请号：US13749884

申请日：2013-01-25

Applicant: Infineon Technologies AG

Inventor： Torsten Groening ,  Mark Essert ,  Christian Steininger ,  Roman Lennart Tschirbs

IPC: H01L23/40 ,  H01L21/50

CPC classification number: H01L23/40 ,  H01L21/4878 ,  H01L21/50 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.

Abstract translation: 功率半导体模块包括具有顶面，下侧和形成在基板中的凹陷的基板。 凹陷延伸到从顶部进行的底板。 底板的厚度在凹陷区域局部减小。 功率半导体模块还包括布置在基板的顶侧上的凹陷上方的电路载体，使得凹陷插入电路载体和底板的下侧之间。

公开(公告)号：US09000580B2

公开(公告)日：2015-04-07

申请号：US13749884

申请日：2013-01-25

Applicant: Infineon Technologies AG

Inventor： Torsten Groening ,  Mark Essert ,  Christian Steininger ,  Roman Lennart Tschirbs

IPC: H01L29/24 ,  H01L23/40 ,  H01L21/50 ,  H01L23/36 ,  H01L23/373 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/40 ,  H01L21/4878 ,  H01L21/50 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.

Abstract translation: 功率半导体模块包括具有顶面，下侧和形成在基板中的凹陷的基板。 凹陷延伸到从顶部进行的底板。 底板的厚度在凹陷区域局部减小。 功率半导体模块还包括布置在基板的顶侧上的凹陷上方的电路载体，使得凹陷插入电路载体和底板的下侧之间。