- 专利标题： Substrate for semiconductor device, semiconductor device having the substrate, and manufacturing method thereof
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申请号： US13568208申请日： 2012-08-07
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公开(公告)号： US09000593B2公开(公告)日： 2015-04-07
- 发明人: Su Jeong Suh , Hwa Sun Park , Hyeong Chul Youn
- 申请人： Su Jeong Suh , Hwa Sun Park , Hyeong Chul Youn
- 申请人地址： KR Suwon-si
- 专利权人： Research & Business Foundation Sungkyunkwan University
- 当前专利权人： Research & Business Foundation Sungkyunkwan University
- 当前专利权人地址： KR Suwon-si
- 代理机构： NSIP Law
- 优先权： KR10-2011-0078478 20110808
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/40 ; H01L23/495 ; H01L23/14 ; H01L33/64
摘要：
A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal line is electrically connected to a second electrode of the semiconductor device and spaced apart from the first metal line. The metal support part is disposed between the first metal line and the second metal line. The first insulating part is disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part. The second insulating part is disposed between the second metal line and the metal support part and configured to electrically insulate the second metal line from the metal support part.