Invention Grant
US09006873B2 Method of manufacturing a semiconductor device with a carrier having a cavity and semiconductor device
有权
制造具有空腔和半导体器件的载体的半导体器件的制造方法
- Patent Title: Method of manufacturing a semiconductor device with a carrier having a cavity and semiconductor device
- Patent Title (中): 制造具有空腔和半导体器件的载体的半导体器件的制造方法
-
Application No.: US13944595Application Date: 2013-07-17
-
Publication No.: US09006873B2Publication Date: 2015-04-14
- Inventor: Ivan Nikitin , Joachim Mahler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/34 ; H01L23/498 ; H01L23/13 ; H01L23/492 ; H01L23/538 ; H01L23/00 ; H01L21/56 ; H01L23/31
Abstract:
A method includes providing a carrier having a first cavity, providing a dielectric foil with a metal layer attached to the dielectric foil, placing a first semiconductor chip in the first cavity of the carrier, and applying the dielectric foil to the carrier.
Public/Granted literature
- US20140021634A1 Method of Manufacturing a Semiconductor Device with a Carrier Having a Cavity and Semiconductor Device Public/Granted day:2014-01-23
Information query
IPC分类:
