Invention Grant
- Patent Title: Volatile memory with a decreased consumption and an improved storage capacity
- Patent Title (中): 挥发性记忆体,消耗减少,存储容量提高
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Application No.: US13754427Application Date: 2013-01-30
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Publication No.: US09007848B2Publication Date: 2015-04-14
- Inventor: Anis Feki
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1251037 20120203
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/00 ; G11C7/18 ; G11C8/12 ; G11C8/14 ; G11C8/16

Abstract:
A volatile memory includes volatile memory cells in which data write and read operations are performed. The memory cells are arranged in rows and in columns and are distributed in first separate groups of memory cells for each column. The memory includes, for each column, a write bit line dedicated to write operations and connected to all the memory cells of the column and read bit lines dedicated to read operations. Each read bit line is connected to all the memory cells of one of the first groups of memory cells. Each memory cell in the column is connected to a single one of the read bit lines.
Public/Granted literature
- US20130201766A1 Volatile Memory with a Decreased Consumption and an Improved Storage Capacity Public/Granted day:2013-08-08
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