发明授权
US09012957B2 MOS transistor 有权
MOS晶体管

MOS transistor
摘要:
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof, the internal surface of the channel-forming semiconductor region being coated with a conductive gate, a gate insulator being interposed.
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