发明授权
- 专利标题: MOS transistor
- 专利标题(中): MOS晶体管
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申请号: US14017024申请日: 2013-09-03
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公开(公告)号: US09012957B2公开(公告)日: 2015-04-21
- 发明人: Vincent Quenette
- 申请人: STMicroelectronics S.A.
- 申请人地址: FR Montrouge
- 专利权人: STMicroelectronics S.A.
- 当前专利权人: STMicroelectronics S.A.
- 当前专利权人地址: FR Montrouge
- 代理机构: Seed IP Law Group PLLC
- 优先权: FR1258240 20120904
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/78 ; H01L29/66 ; H01L29/423
摘要:
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof, the internal surface of the channel-forming semiconductor region being coated with a conductive gate, a gate insulator being interposed.
公开/授权文献
- US20140061723A1 MOS TRANSISTOR 公开/授权日:2014-03-06
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