发明授权
- 专利标题: Nitride single crystal manufacturing apparatus
- 专利标题(中): 氮化物单晶制造装置
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申请号: US12181402申请日: 2008-07-29
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公开(公告)号: US09017479B2公开(公告)日: 2015-04-28
- 发明人: Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
- 申请人: Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
- 申请人地址: JP Nagoya JP Suita JP Nishikasugai-Gun
- 专利权人: NGK Insulators, Ltd.,Osaka University,Toyoda Gosei Co., Ltd.
- 当前专利权人: NGK Insulators, Ltd.,Osaka University,Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Nagoya JP Suita JP Nishikasugai-Gun
- 代理机构: Burr & Brown, PLLC
- 优先权: JP2006-080126 20060323
- 主分类号: C30B35/00
- IPC分类号: C30B35/00 ; C30B11/04 ; C30B9/10 ; C30B19/02 ; C30B19/06 ; C30B29/40 ; C30B7/00
摘要:
The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.
公开/授权文献
- US20080282971A1 NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS 公开/授权日:2008-11-20
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