Invention Grant
US09018086B2 Semiconductor device having a metal gate and fabricating method thereof
有权
具有金属栅极的半导体器件及其制造方法
- Patent Title: Semiconductor device having a metal gate and fabricating method thereof
- Patent Title (中): 具有金属栅极的半导体器件及其制造方法
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Application No.: US14105198Application Date: 2013-12-13
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Publication No.: US09018086B2Publication Date: 2015-04-28
- Inventor: Chi-Mao Hsu , Hsin-Fu Huang , Chin-Fu Lin , Min-Chuan Tsai , Wei-Yu Chen , Chien-Hao Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L29/76 ; H01L21/28 ; H01L21/8238 ; H01L29/40 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.
Public/Granted literature
- US20140097507A1 Semiconductor Device Having a Metal Gate and Fabricating Method Thereof Public/Granted day:2014-04-10
Information query
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