-
公开(公告)号：US09755047B2
公开(公告)日：2017-09-05
申请号：US14924532
申请日：2015-10-27
发明人： Pin-Hong Chen , Kuo-Chih Lai , Chia-Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Min-Chuan Tsai , Kuo-Chin Hung , Wei-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
IPC分类号： H01L27/088 , H01L29/66 , H01L29/78 , H01L21/285
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L29/267 , H01L29/45 , H01L29/7845 , H01L29/785
摘要： A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.
-
公开(公告)号：US20140346616A1
公开(公告)日：2014-11-27
申请号：US14454727
申请日：2014-08-08
发明人： Min-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu , Chin-Fu Lin , Chien-Hao Chen , Wei-Yu Chen , Chi-Yuan Sun , Ya-Hsueh Hsieh , Tsun-Min Cheng
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4958 , H01L29/512 , H01L29/517 , H01L29/66545 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. A semiconductor process forming said semiconductor structure is also provided.
摘要翻译： 半导体结构包括功函数金属层，（功函数）金属氧化物层和主电极。 功函数金属层位于基板上。 （功函数）金属氧化物层位于功函数金属层上。 主电极位于（功函数）金属氧化物层上。 还提供了形成所述半导体结构的半导体工艺。
-
公开(公告)号：US20140239419A1
公开(公告)日：2014-08-28
申请号：US13778227
申请日：2013-02-27
发明人： Chien-Hao Chen , Hsin-Fu Huang , Chi-Yuan Sun , Min-Chuan Tsai , Wei-Yu Chen , Nien-Ting Ho , Tsun-Min Cheng , Chi-Mao Hsu
IPC分类号： H01L29/423 , H01L29/40
CPC分类号： H01L29/401 , H01L21/28044 , H01L21/28185 , H01L29/4925 , H01L29/51
摘要： A method of manufacturing a semiconductor device is provided. A silicon substrate is provided, and a gate insulating layer is formed on the silicon substrate. Then, a silicon barrier layer is formed on the gate insulating layer by the physical vapor deposition (PVD) process. Next, a silicon-containing layer is formed on the silicon barrier layer. The silicon barrier layer of the embodiment is a hydrogen-substantial-zero silicon layer, which has a hydrogen concentration of zero substantially.
摘要翻译： 提供一种制造半导体器件的方法。 提供硅衬底，并且在硅衬底上形成栅极绝缘层。 然后，通过物理气相沉积（PVD）工艺在栅极绝缘层上形成硅阻挡层。 接着，在硅阻隔层上形成含硅层。 本实施方式的硅阻隔层是基本上为氢的氢浓度为零的氢 - 实际为零的硅层。
-
公开(公告)号：US10199269B2
公开(公告)日：2019-02-05
申请号：US15361503
申请日：2016-11-28
发明人： Li-Han Chen , Yen-Tsai Yi , Chun-Chieh Chiu , Min-Chuan Tsai , Wei-Chuan Tsai , Hsin-Fu Huang
IPC分类号： H01L23/485 , H01L21/768 , H01L23/535 , H01L23/532 , H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/24 , H01L29/267 , H01L29/78
摘要： A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.
-
公开(公告)号：US10192826B2
公开(公告)日：2019-01-29
申请号：US15853978
申请日：2017-12-26
发明人： Kun-Ju Li , Kuo-Chin Hung , Min-Chuan Tsai , Wei-Chuan Tsai , Yi-Han Liao , Chun-Tsen Lu , Fu-Shou Tsai , Li-Chieh Hsu
IPC分类号： H01L23/52 , H01L29/41 , H01L23/528 , H01L23/532 , H01L23/485 , H01L21/768 , H01L23/522 , H01L29/417 , H01L29/66 , H01L29/78
摘要： A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.
-
公开(公告)号：US10068797B2
公开(公告)日：2018-09-04
申请号：US15586240
申请日：2017-05-03
发明人： Pin-Hong Chen , Kuo-Chih Lai , Chia Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Shu Min Huang , Min-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
IPC分类号： H01L21/4763 , H01L21/768 , H01L21/285 , H01L23/532
摘要： A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.
-
公开(公告)号：US09570348B2
公开(公告)日：2017-02-14
申请号：US14709083
申请日：2015-05-11
发明人： Pin-Hong Chen , Kuo-Chih Lai , Chia-Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Shu-Min Huang , Min-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
IPC分类号： H01L21/768
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/76805 , H01L21/76816 , H01L21/76843 , H01L21/76855 , H01L21/76889 , H01L21/76897 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266
摘要： A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.
摘要翻译： 提供一种形成接触结构的方法。 含硅基板上形成有复合电介质层。 开口穿过复合介电层并暴露出源/漏区的一部分。 在开口中形成氮化钛层，氮化钛层与源极/漏极区域的露出部分接触。 将氮化钛层退火，使得氮化钛层的底部部分转变为硅化钛层。 形成导电层以填充开口。
-
公开(公告)号：US20150004780A1
公开(公告)日：2015-01-01
申请号：US14490679
申请日：2014-09-19
发明人： Tsun-Min Cheng , Min-Chuan Tsai , Chih-Chien Liu , Jen-Chieh Lin , Pei-Ying Li , Shao-Wei Wang , Mon-Sen Lin , Ching-Ling Lin
IPC分类号： H01L29/49 , H01L21/8234
CPC分类号： H01L29/4966 , H01L21/82345 , H01L21/823842 , H01L21/823857 , H01L29/4232 , H01L29/435 , H01L29/51 , H01L29/66045 , H01L29/66545 , H01L29/78
摘要： A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
摘要翻译： 位于基板上的金属栅极结构包括栅介质层，金属层和氮化铝钛金属层。 栅介质层位于衬底上。 金属层位于栅极电介质层上。 氮化铝钛金属层位于金属层上。
-
公开(公告)号：US09985110B2
公开(公告)日：2018-05-29
申请号：US15656778
申请日：2017-07-21
发明人： Pin-Hong Chen , Kuo-Chih Lai , Chia-Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Min-Chuan Tsai , Kuo-Chin Hung , Wei-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
IPC分类号： H01L27/088 , H01L29/66 , H01L29/45 , H01L29/267 , H01L29/78 , H01L21/285
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L29/267 , H01L29/45 , H01L29/7845 , H01L29/785
摘要： A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.
-
10.发明申请公开(公告)号：US20180138125A1
公开(公告)日：2018-05-17
申请号：US15853978
申请日：2017-12-26
发明人： Kun-Ju Li , Kuo-Chin Hung , Min-Chuan Tsai , Wei-Chuan Tsai , Yi-Han Liao , Chun-Tsen Lu , Fu-Shou Tsai , Li-Chieh Hsu
IPC分类号： H01L23/528 , H01L29/417 , H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L23/5283 , H01L21/76843 , H01L21/76846 , H01L21/76883 , H01L23/485 , H01L23/5228 , H01L23/53238 , H01L23/53266 , H01L29/41758 , H01L29/66628 , H01L29/7833
摘要： A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.
-
-
-
-
-
-
-
-
-
搜索结果
38 条记录 (耗时 0.018 秒)
