Invention Grant
- Patent Title: Adjustable avalanche diode in an integrated circuit
- Patent Title (中): 集成电路中的可调雪崩二极管
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Application No.: US13895715Application Date: 2013-05-16
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Publication No.: US09018729B2Publication Date: 2015-04-28
- Inventor: Raul Andres Bianchi , Pascal Fonteneau
- Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles FR Montrouge
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee Address: FR Crolles FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1255433 20120611
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L31/0256 ; H01L27/144 ; H01L31/18 ; H01L29/66 ; H01L29/866 ; H01L29/06
Abstract:
An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm.
Public/Granted literature
- US20130328150A1 ADJUSTABLE AVALANCHE DIODE IN AN INTEGRATED CIRCUIT Public/Granted day:2013-12-12
Information query
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