Invention Grant
- Patent Title: Integrated stacked power amplifier and RF switch architecture
- Patent Title (中): 集成式功率放大器和射频开关架构
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Application No.: US13900077Application Date: 2013-05-22
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Publication No.: US09019010B2Publication Date: 2015-04-28
- Inventor: Julio Costa
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F3/191 ; H03F3/193 ; H03F3/21 ; H03F3/24 ; H04B1/00

Abstract:
Combination circuitry includes a relatively small preamplifier and includes hybrid circuitry. The hybrid circuitry is configured to perform mode switching while also performing some amplification, thus allowing the relatively small preamplifier to be smaller than a conventional power amplifier. In one embodiment, the hybrid circuitry includes first series portion configured to amplify when ON, a first shunt portion, a second series portion configured to amplify when ON, and a second shunt portion. The first series portion may include: a first transistor; a first variable impedance in communication with a gate of the first transistor, wherein the first variable impedance is configured to receive a first transistor control signal; a second transistor in series with the first transistor; and a second variable impedance in communication with a gate of the second transistor, wherein second variable impedance is configured to receive a second transistor control signal.
Public/Granted literature
- US20130314163A1 INTEGRATED STACKED POWER AMPLIFIER AND RF SWITCH ARCHITECTURE Public/Granted day:2013-11-28
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