Invention Grant
- Patent Title: Memory device with reduced on-chip noise
- Patent Title (中): 具有降低片内噪声的存储器件
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Application No.: US14050625Application Date: 2013-10-10
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Publication No.: US09019794B2Publication Date: 2015-04-28
- Inventor: Thomas Andre , Syed M. Alam , Dietmar Gogl
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Lee & Hayes, PLLC
- Main IPC: G11C8/12
- IPC: G11C8/12 ; G11C7/02 ; G11C5/14 ; G11C16/12 ; G11C16/30

Abstract:
In some examples, a memory device includes multiple memory banks equipped with an isolation switch and dedicated power supply pins. The isolation switch of each memory bank is configured to isolate the memory bank from global signals. The dedicated power supply pins are configured to connect each of the memory banks to a dedicated local power supply pads on the package substrate to provide local dedicated power supplies to each of the memory banks and to reduce voltage transfer between memory banks over conductors on the device, the device substrate, or the package substrate of the memory device.
Public/Granted literature
- US20140104963A1 MEMORY DEVICE WITH REDUCED ON-CHIP NOISE Public/Granted day:2014-04-17
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