发明授权
- 专利标题： Processing method of silicon substrate and liquid ejection head manufacturing method
- 专利标题（中）： 硅基板和液体喷头制造方法的处理方法
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申请号： US13186740申请日： 2011-07-20
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公开(公告)号： US09023669B2公开(公告)日： 2015-05-05
- 发明人: Atsushi Hiramoto , Masahiko Kubota , Ryoji Kanri , Akihiko Okano , Yoshiyuki Fukumoto , Atsunori Terasaki
- 申请人： Atsushi Hiramoto , Masahiko Kubota , Ryoji Kanri , Akihiko Okano , Yoshiyuki Fukumoto , Atsunori Terasaki
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2010-167909 20100727
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; B41J2/16
摘要：
A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate, the shield structure preventing inside of the first opening from being exposed to the plasma.
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