公开(公告)号：US09023669B2

公开(公告)日：2015-05-05

申请号：US13186740

申请日：2011-07-20

申请人： Atsushi Hiramoto ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Yoshiyuki Fukumoto ,  Atsunori Terasaki

发明人： Atsushi Hiramoto ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Yoshiyuki Fukumoto ,  Atsunori Terasaki

IPC分类号： H01L21/3065 ,  B41J2/16

CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2002/14467 ,  H01L21/30655

摘要： A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate, the shield structure preventing inside of the first opening from being exposed to the plasma.

摘要翻译： 一种硅衬底的处理方法，包括使用具有通过等离子体反应离子蚀刻的图案开口的图案化掩模在第一开口的底部形成第二开口。 反应离子蚀刻通过形成在硅衬底中或之上的屏蔽结构进行，防止第一开口内部的屏蔽结构暴露于等离子体。

公开(公告)号：US20120028383A1

公开(公告)日：2012-02-02

申请号：US13186740

申请日：2011-07-20

申请人： Atsushi Hiramoto ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Yoshiyuki Fukumoto ,  Atsunori Terasaki

发明人： Atsushi Hiramoto ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Yoshiyuki Fukumoto ,  Atsunori Terasaki

IPC分类号： H01L21/3065

CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2002/14467 ,  H01L21/30655

摘要： A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate, the shield structure preventing inside of the first opening from being exposed to the plasma.

摘要翻译： 一种硅衬底的处理方法，包括使用具有通过等离子体反应离子蚀刻的图案开口的图案化掩模在第一开口的底部形成第二开口。 反应离子蚀刻通过形成在硅衬底中或之上的屏蔽结构进行，防止第一开口内部的屏蔽结构暴露于等离子体。

公开(公告)号：US08398212B2

公开(公告)日：2013-03-19

申请号：US12635948

申请日：2009-12-11

申请人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

发明人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

IPC分类号： B41J2/05

CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1634

摘要： An ink jet head includes a Si substrate with a surface having a {100} orientation; a passage holding ink on the Si substrate; an ink discharge port which is communicatively connected to the passage and through which ink is ejected; and a supply port which extends through the Si substrate, which is communicatively connected to the passage, and which supplies ink to the passage. The supply port has walls having two {111} planes facing each other.

摘要翻译： 喷墨头包括具有{100}取向的表面的Si衬底; 在Si衬底上保持油墨的通道; 墨水排出口，其连通地连接到通道并通过其喷射墨水; 以及供应端口，其延伸穿过Si衬底，其通信地连接到通道，并且向通道供应墨水。 供应端口具有彼此面对的两个{111}平面的壁。

公开(公告)号：US20100156990A1

公开(公告)日：2010-06-24

申请号：US12629238

申请日：2009-12-02

申请人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

发明人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

IPC分类号： B41J2/14 ,  B23P17/00

CPC分类号： B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2002/14467 ,  Y10T29/494

摘要： A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from first surface to rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a direction the first surface; and forming a plurality of the supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.

摘要翻译： 液体排出头包括：Si基板，其设置有用于产生用于排出液体的能量的元件和液体供给口，所述液体供给口被设置成从第一表面到后表面穿过Si基板，从而将液体供应到 元件。 一种制造基板的方法包括：在Si基板的背面上形成多个凹部，其中平面取向为{100}，凹面朝向第一表面并且沿着<100>方向排成一列 第一表面 并且通过使用其中Si衬底的{100}面的蚀刻速率比{D“的{100}面的蚀刻速度慢的蚀刻液，通过凹部对Si衬底进行晶轴各向异性蚀刻来形成多个供给口， 110}面。

公开(公告)号：US08366951B2

公开(公告)日：2013-02-05

申请号：US12629238

申请日：2009-12-02

申请人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

发明人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

IPC分类号： G01D15/00

CPC分类号： B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2002/14467 ,  Y10T29/494

摘要： A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from a first surface to a rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a direction of the Si substrate; and forming a plurality of the liquid supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.

摘要翻译： 液体排出头包括：Si基板，其设置有用于产生用于排出液体的能量的元件;以及液体供给口，其被设置成从第一表面到后表面穿过Si基板，以便供应液体 到元素 制造基板的方法包括：在Si基板的后表面上形成多个凹部，其平面取向为{100}，所述凹部面向第一表面并沿着<100> Si衬底; 并且通过使用其中Si衬底的{100}面的蚀刻速率慢于所述Si衬底的蚀刻速率的蚀刻液，通过所述凹部对所述Si衬底进行晶轴各向异性蚀刻来形成多个所述液体供给口 {110}面的Si衬底。

公开(公告)号：US20100149260A1

公开(公告)日：2010-06-17

申请号：US12635948

申请日：2009-12-11

申请人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

发明人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

IPC分类号： B41J2/135 ,  G11B5/127

CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1634

摘要： An ink jet head includes a Si substrate with a surface having a {100} orientation; a passage holding ink on the Si substrate; an ink discharge port which is communicatively connected to the passage and through which ink is ejected; and a supply port which extends through the Si substrate, which is communicatively connected to the passage, and which supplies ink to the passage. The supply port has walls having two {111} planes facing each other.

摘要翻译： 喷墨头包括具有{100}取向的表面的Si衬底; 在Si衬底上保持油墨的通道; 墨水排出口，其连通地连接到通道并通过其喷射墨水; 以及供应端口，其延伸穿过Si衬底，其通信地连接到通道，并且向通道供应墨水。 供应端口具有彼此面对的两个{111}平面的壁。

公开(公告)号：US20110108532A1

公开(公告)日：2011-05-12

申请号：US12907349

申请日：2010-10-19

申请人： Kosuke Kurachi ,  Masahiko Kubota ,  Akihiko Okano ,  Atsushi Hiramoto

发明人： Kosuke Kurachi ,  Masahiko Kubota ,  Akihiko Okano ,  Atsushi Hiramoto

IPC分类号： B23K26/38

CPC分类号： B23K26/18 ,  B23K26/361 ,  B23K26/40 ,  B23K26/53 ,  B23K26/60 ,  B23K2103/50 ,  H01L21/268

摘要： Provided is a laser processing method capable of improving precision of a processing shape and degree of freedom of the processing shape. When a recess portion is formed in a substrate (W) which is an object to be processed, an inner portion of the substrate (W) is scanned with a condensing point (LS1) of modification laser light (L1) which is first laser light to form a modified layer (Wr) which becomes a boundary of a laser processing region (R1) in a position corresponding to a bottom part of the recess portion (modified layer forming step). Next, a surface (Wa) of the substrate (W) is irradiated with condensed processing laser light which is second laser light to remove and process the laser processing region (R1) defined by the modified layer (Wr), to thereby form the recess portion (removing/processing step).

摘要翻译： 提供了能够提高加工形状的精度和加工形状的自由度的激光加工方法。 当在作为被加工物的基板（W）上形成有凹部时，用作为第一激光的变形激光（L1）的聚光点（LS1）扫描基板（W）的内部， 形成在与凹部（修饰层形成工序）的底部对应的位置成为激光加工区域（R1）的边界的改质层（Wr）。 接下来，用作为第二激光的聚光处理用激光照射基板（W）的表面（Wa），以去除并处理由改性层（Wr）限定的激光加工区域（R1），从而形成凹部 部分（去除/处理步骤）。

公开(公告)号：US08829391B2

公开(公告)日：2014-09-09

申请号：US12907349

申请日：2010-10-19

申请人： Kosuke Kurachi ,  Masahiko Kubota ,  Akihiko Okano ,  Atsushi Hiramoto

发明人： Kosuke Kurachi ,  Masahiko Kubota ,  Akihiko Okano ,  Atsushi Hiramoto

IPC分类号： B23K26/42 ,  B23K26/40 ,  B23K26/18 ,  B23K26/36 ,  H01L21/268 ,  B23K26/00

CPC分类号： B23K26/18 ,  B23K26/361 ,  B23K26/40 ,  B23K26/53 ,  B23K26/60 ,  B23K2103/50 ,  H01L21/268

摘要： A laser processing method of processing an object to be processed. The object to be processed has a modified portion and a non-modified portion. A modified layer forming step forms a modified layer of the object to be processed by scanning an inner portion of the object with a condensing point of first laser light. The modified layer (i) has a processing speed with second laser light that is lower than a processing speed of a non-modified portion and (ii) is formed below the non-modified portion. A removing step removes a portion of the non-modified portion. The portion of the non-modified portion ranges from a surface of the object to the modified layer. The removing step includes irradiating the portion of the non-modified portion with the second laser light.

摘要翻译： 一种处理被处理物体的激光加工方法。 待处理对象具有修改部分和未修改部分。 改性层形成步骤通过用第一激光的聚光点扫描物体的内部来形成被处理物体的改性层。 改性层（i）的处理速度与第二激光的处理速度相比低于非变形部的处理速度，（ii）形成在非变形部的下方。 去除步骤去除未修饰部分的一部分。 未改性部分的部分从物体的表面到改性层的范围。 去除步骤包括用第二激光照射非改性部分的部分。