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    STRUCTURE MANUFACTURING METHOD AND LIQUID DISCHARGE HEAD SUBSTRATE MANUFACTURING METHOD
    3.
    发明申请
    STRUCTURE MANUFACTURING METHOD AND LIQUID DISCHARGE HEAD SUBSTRATE MANUFACTURING METHOD 有权
    结构制造方法和液体放电头基板制造方法

    公开(公告)号：US20120282715A1

    公开(公告)日：2012-11-08

    申请号：US13521694

    申请日：2011-01-13

    申请人： Atsunori Terasaki ,  Masahiko Kubota ,  Ryoji Kanri ,  Yoshiyuki Fukumoto

    发明人： Atsunori Terasaki ,  Masahiko Kubota ,  Ryoji Kanri ,  Yoshiyuki Fukumoto

    IPC分类号： H01L21/00

    CPC分类号： B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1642

    摘要： A method for processing a silicon substrate includes providing a combination of a first silicon substrate, a second silicon substrate, and an intermediate layer including a plurality of recessed portions, which is provided between the first silicon substrate and the second silicon substrate, forming a first through hole that goes through the first silicon substrate by executing etching of the first silicon substrate on a surface of the first silicon substrate opposite to a bonding surface with the intermediate layer by using a first mask, and exposing a portion of the intermediate layer corresponding to the plurality of recessed portions of the intermediate layer, forming a plurality of openings on the intermediate layer by removing a portion constituting a bottom of the plurality of recessed portions, and forming a second through hole that goes through the second silicon substrate by executing second etching of the second silicon substrate by using the intermediate layer on which the plurality of openings are formed as a mask.

    摘要翻译： 一种处理硅衬底的方法，包括提供第一硅衬底，第二硅衬底和包括多个凹陷部分的中间层的组合，其设置在第一硅衬底和第二硅衬底之间，形成第一衬底 通过使用第一掩模在所述第一硅衬底的与所述中间层的接合表面相对的表面上执行所述第一硅衬底的表面的蚀刻来穿过所述第一硅衬底的通孔，以及将与所述第一硅衬底相对应的所述中间层的一部分 中间层的多个凹部，通过除去构成多个凹部的底部的部分，在中间层上形成多个开口，并且通过执行第二蚀刻形成穿过第二硅衬底的第二通孔 的第二硅衬底通过使用其上的中间层 形成多个开口作为掩模。

    Structure manufacturing method and liquid discharge head substrate manufacturing method
    4.
    发明授权
    Structure manufacturing method and liquid discharge head substrate manufacturing method 有权
    结构制造方法和排液头基板的制造方法

    公开(公告)号：US08518725B2

    公开(公告)日：2013-08-27

    申请号：US13521694

    申请日：2011-01-13

    申请人： Atsunori Terasaki ,  Masahiko Kubota ,  Ryoji Kanri ,  Yoshiyuki Fukumoto

    发明人： Atsunori Terasaki ,  Masahiko Kubota ,  Ryoji Kanri ,  Yoshiyuki Fukumoto

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  B21D53/76 ,  B23P17/00 ,  G01D15/00 ,  G11B5/127 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1642

    摘要： A method for processing a silicon substrate includes providing a combination of a first silicon substrate, a second silicon substrate, and an intermediate layer including a plurality of recessed portions, which is provided between the first silicon substrate and the second silicon substrate, forming a first through hole that goes through the first silicon substrate by executing etching of the first silicon substrate on a surface of the first silicon substrate opposite to a bonding surface with the intermediate layer by using a first mask, and exposing a portion of the intermediate layer corresponding to the plurality of recessed portions of the intermediate layer, forming a plurality of openings on the intermediate layer by removing a portion constituting a bottom of the plurality of recessed portions, and forming a second through hole that goes through the second silicon substrate by executing second etching of the second silicon substrate by using the intermediate layer on which the plurality of openings are formed as a mask.

    摘要翻译： 一种处理硅衬底的方法，包括提供第一硅衬底，第二硅衬底和包括多个凹陷部分的中间层的组合，其设置在第一硅衬底和第二硅衬底之间，形成第一衬底 通过使用第一掩模在所述第一硅衬底的与所述中间层的接合表面相对的表面上执行所述第一硅衬底的表面的蚀刻来穿过所述第一硅衬底的通孔，以及将与所述第一硅衬底相对应的所述中间层的一部分 中间层的多个凹部，通过除去构成多个凹部的底部的部分，在中间层上形成多个开口，并且通过执行第二蚀刻形成穿过第二硅衬底的第二通孔 的第二硅衬底通过使用其上的中间层 形成多个开口作为掩模。

    Ink jet head and method of manufacturing the same
    5.
    发明授权
    Ink jet head and method of manufacturing the same 有权
    喷墨头及其制造方法

    公开(公告)号：US08398212B2

    公开(公告)日：2013-03-19

    申请号：US12635948

    申请日：2009-12-11

    申请人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

    发明人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

    IPC分类号： B41J2/05

    CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1634

    摘要： An ink jet head includes a Si substrate with a surface having a {100} orientation; a passage holding ink on the Si substrate; an ink discharge port which is communicatively connected to the passage and through which ink is ejected; and a supply port which extends through the Si substrate, which is communicatively connected to the passage, and which supplies ink to the passage. The supply port has walls having two {111} planes facing each other.

    摘要翻译： 喷墨头包括具有{100}取向的表面的Si衬底; 在Si衬底上保持油墨的通道; 墨水排出口，其连通地连接到通道并通过其喷射墨水; 以及供应端口，其延伸穿过Si衬底，其通信地连接到通道，并且向通道供应墨水。 供应端口具有彼此面对的两个{111}平面的壁。

    Liquid discharge head and method of manufacturing a substrate for the liquid discharge head
    7.
    发明授权
    Liquid discharge head and method of manufacturing a substrate for the liquid discharge head 有权
    液体排出头及液体排出头用基板的制造方法

    公开(公告)号：US08366951B2

    公开(公告)日：2013-02-05

    申请号：US12629238

    申请日：2009-12-02

    申请人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

    发明人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

    IPC分类号： G01D15/00

    CPC分类号： B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2002/14467 ,  Y10T29/494

    摘要： A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from a first surface to a rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a direction of the Si substrate; and forming a plurality of the liquid supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.

    摘要翻译： 液体排出头包括：Si基板，其设置有用于产生用于排出液体的能量的元件;以及液体供给口，其被设置成从第一表面到后表面穿过Si基板，以便供应液体 到元素 制造基板的方法包括：在Si基板的后表面上形成多个凹部，其平面取向为{100}，所述凹部面向第一表面并沿着<100> Si衬底; 并且通过使用其中Si衬底的{100}面的蚀刻速率慢于所述Si衬底的蚀刻速率的蚀刻液，通过所述凹部对所述Si衬底进行晶轴各向异性蚀刻来形成多个所述液体供给口 {110}面的Si衬底。

    INK JET HEAD AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    INK JET HEAD AND METHOD OF MANUFACTURING THE SAME 有权
    喷墨头及其制造方法

    公开(公告)号：US20100149260A1

    公开(公告)日：2010-06-17

    申请号：US12635948

    申请日：2009-12-11

    申请人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

    发明人： Akihiko Okano ,  Masahiko Kubota ,  Ryoji Kanri ,  Atsushi Hiramoto

    IPC分类号： B41J2/135 ,  G11B5/127

    CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1634

    摘要： An ink jet head includes a Si substrate with a surface having a {100} orientation; a passage holding ink on the Si substrate; an ink discharge port which is communicatively connected to the passage and through which ink is ejected; and a supply port which extends through the Si substrate, which is communicatively connected to the passage, and which supplies ink to the passage. The supply port has walls having two {111} planes facing each other.

    摘要翻译： 喷墨头包括具有{100}取向的表面的Si衬底; 在Si衬底上保持油墨的通道; 墨水排出口，其连通地连接到通道并通过其喷射墨水; 以及供应端口，其延伸穿过Si衬底，其通信地连接到通道，并且向通道供应墨水。 供应端口具有彼此面对的两个{111}平面的壁。

    LIQUID DISCHARGE HEAD AND METHOD OF MANUFACTURING THE LIQUID DISCHARGE HEAD
    9.
    发明申请
    LIQUID DISCHARGE HEAD AND METHOD OF MANUFACTURING THE LIQUID DISCHARGE HEAD 有权
    液体放电头及液体放电头制造方法

    公开(公告)号：US20100156990A1

    公开(公告)日：2010-06-24

    申请号：US12629238

    申请日：2009-12-02

    申请人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

    发明人： Masafumi Morisue ,  Takumi Suzuki ,  Masahiko Kubota ,  Ryoji Kanri ,  Akihiko Okano ,  Atsushi Hiramoto

    IPC分类号： B41J2/14 ,  B23P17/00

    CPC分类号： B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1645 ,  B41J2002/14467 ,  Y10T29/494

    摘要： A liquid discharge head includes an Si substrate which is provided with an element for generating energy used in discharging a liquid and a liquid supply port which is provided to pass through the Si substrate from first surface to rear surface so as to supply a liquid to the element. A method of manufacturing the substrate includes: forming a plurality of concave portions on the rear surface of the Si substrate of which a plane orientation is {100}, the concave portions facing the first surface and aligned in rows along a direction the first surface; and forming a plurality of the supply ports by carrying out a crystal axis anisotropic etching on the Si substrate through the concave portions using an etching liquid of which an etching rate of the {100} plane of the Si substrate is slower than that of the {110} plane of the Si substrate.

    摘要翻译： 液体排出头包括：Si基板，其设置有用于产生用于排出液体的能量的元件和液体供给口，所述液体供给口被设置成从第一表面到后表面穿过Si基板，从而将液体供应到 元件。 一种制造基板的方法包括：在Si基板的背面上形成多个凹部，其中平面取向为{100}，凹面朝向第一表面并且沿着<100>方向排成一列 第一表面 并且通过使用其中Si衬底的{100}面的蚀刻速率比{D“的{100}面的蚀刻速度慢的蚀刻液，通过凹部对Si衬底进行晶轴各向异性蚀刻来形成多个供给口， 110}面。