Some embodiments of the present disclosure relate to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern to a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.