公开(公告)号：US11994809B2

公开(公告)日：2024-05-28

申请号：US18337574

申请日：2023-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

IPC: G03F7/00 ,  B01D53/04 ,  B01D53/30 ,  C23C16/44

CPC classification number: G03F7/70858 ,  B01D53/0407 ,  B01D53/30 ,  C23C16/4412 ,  B01D2257/108 ,  B01D2257/553 ,  B01D2257/93 ,  B01D2258/0216

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

公开(公告)号：US20230333489A1

公开(公告)日：2023-10-19

申请号：US18337574

申请日：2023-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

IPC: G03F7/20 ,  C23C16/44 ,  B01D53/04 ,  B01D53/30

CPC classification number: G03F7/70858 ,  C23C16/4412 ,  B01D53/0407 ,  B01D53/30 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2257/108 ,  B01D2257/553

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

公开(公告)号：US10684559B2

公开(公告)日：2020-06-16

申请号：US15902528

申请日：2018-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Fu Lin ,  Tung-Jung Chang ,  Chia-Chen Chen

IPC: G03B27/42 ,  G03F7/20 ,  B08B3/12 ,  B08B7/02

Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

公开(公告)号：US09558944B2

公开(公告)日：2017-01-31

申请号：US14716917

申请日：2015-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao Hsu ,  Chia-Chen Chen ,  Jui-Ching Wu ,  Shang-Chieh Chien ,  Chia-Jen Chen ,  Chia-Ching Huang

IPC: G03F1/22 ,  G03F1/54 ,  H01L21/027 ,  G03F1/00 ,  G03F7/20

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US20150069253A1

公开(公告)日：2015-03-12

申请号：US14022355

申请日：2013-09-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ching Huang ,  Chia-Hao Hsu ,  Tzu-Hsiang Chen ,  Chia-Chen Chen

IPC: G02F1/19 ,  G01J1/42

CPC classification number: G01J1/429 ,  G02B5/0816 ,  G02B27/0068 ,  G02F1/21 ,  G02F1/29 ,  G02F2203/24

Abstract: Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.

Abstract translation: 本公开的一些实施例涉及形成和操作反射表面以补偿对图案均匀性的像差影响的方法。 在一些实施例中，反射表面包括EUV照明工具的还原光学器件内的反射镜。 在一些实施例中，反射表面包括反射光罩。 包括反射表面的EUV反射表面形貌设置在基板的表面上，并且通过机械力或热变形来操纵。 衬底包括多个空腔，其中每个空腔耦合到变形元件，该变形元件被配置为膨胀空腔的体积，并因此使反射表面的一部分在每个空腔之上变形，以便通过热变形来对反射表面进行局部控制 受到电流的电阻材料或由腔内的加压气体引起的机械变形或压电效应。

公开(公告)号：US12276923B2

公开(公告)日：2025-04-15

申请号：US18673669

申请日：2024-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

IPC: G03F7/00 ,  B01D53/04 ,  B01D53/30 ,  C23C16/44

Abstract: An exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas includes: a main exhaust pipe above the semiconductor manufacturing equipment and having a top surface on a first side and a bottom surface on a second side, a first branch pipe connected to a source of a gas mixture containing the hazardous gas on the second side and connected to the main exhaust pipe through the top surface, a second branch pipe connected to a gas box on the second side and connected to the main exhaust pipe through the bottom surface, and a detector on the second branch pipe configured to detect presence of the hazardous gas and downstream to the gas box. The first and the second branch pipes are connected to the main exhaust pipe at a first location and a second location, respectively. The first location is more upstream than the second location.

公开(公告)号：US20210232054A1

公开(公告)日：2021-07-29

申请号：US17233203

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

IPC: G03F7/20 ,  C23C16/44 ,  B01D53/04 ,  B01D53/30

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

公开(公告)号：US11054756B2

公开(公告)日：2021-07-06

申请号：US16902087

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Fu Lin ,  Tung-Jung Chang ,  Chia-Chen Chen

IPC: G03B27/42 ,  G03F7/20 ,  B08B3/12 ,  B08B7/02

Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

公开(公告)号：US20190079418A1

公开(公告)日：2019-03-14

申请号：US15704549

申请日：2017-09-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

IPC: G03F7/20

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

公开(公告)号：US09665007B2

公开(公告)日：2017-05-30

申请号：US15249989

申请日：2016-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G02B7/182 ,  G02B27/32 ,  G02B27/52 ,  G02B27/54 ,  G03F7/20 ,  G02B5/08 ,  G21K1/06

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.