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公开(公告)号：US09665007B2
公开(公告)日：2017-05-30
申请号：US15249989
申请日：2016-08-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
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公开(公告)号：US09476764B2
公开(公告)日：2016-10-25
申请号：US14022355
申请日：2013-09-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Chia-Hao Hsu , Tzu-Hsiang Chen , Chia-Chen Chen
CPC classification number: G01J1/429 , G02B5/0816 , G02B27/0068 , G02F1/21 , G02F1/29 , G02F2203/24
Abstract: Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.
Abstract translation: 本公开的一些实施例涉及形成和操作反射表面以补偿对图案均匀性的像差影响的方法。 在一些实施例中，反射表面包括EUV照明工具的还原光学器件内的反射镜。 在一些实施例中，反射表面包括反射光罩。 包括反射表面的EUV反射表面形貌设置在基板的表面上，并且通过机械力或热变形来操纵。 衬底包括多个空腔，其中每个空腔耦合到变形元件，该变形元件被配置为膨胀空腔的体积，并因此使反射表面的一部分在每个空腔之上变形，以便通过热变形来对反射表面进行局部控制 受到电流的电阻材料或由腔内的加压气体引起的机械变形或压电效应。
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3.发明申请TOOL CONFIGURATION AND METHOD FOR EXTREME ULTRA-VIOLET (EUV) PATTERNING WITH A DEFORMABLE REFLECTIVE SURFACE 有权具有可反射反射面的极端超紫外线（EUV）工具配置和方法公开(公告)号：US20150104745A1
公开(公告)日：2015-04-16
申请号：US14051683
申请日：2013-10-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Tzu-Hsiang Chen , Chia-Hao Hsu , Chia-Chen Chen
IPC: G03F7/20 , G01N21/956
CPC classification number: G03F7/20 , G03F7/70191 , G03F7/70266 , G03F7/70291 , G03F7/70633 , G03F7/70783
Abstract: Some embodiments of the present disclosure relates to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.
Abstract translation: 本公开的一些实施例涉及用于EUV图案化的工具配置和方法，其具有包括反射镜或掩模版的可变形反射表面。 辐射源提供EUV辐射，其从可变形反射表面反射以将掩模版图案转移到半导体工件。 测量工具测量形成在半导体工件的第一形状和标线图案的第二形状之间的残余矢量。 并且，基于残差向量来改变可变形反射表面的拓扑，以最小化残差向量的总大小。
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公开(公告)号：US20150085264A1
公开(公告)日：2015-03-26
申请号：US14035268
申请日：2013-09-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
Inventor： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
IPC: G03F7/20
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。
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5.发明申请公开(公告)号：US20180286894A1
公开(公告)日：2018-10-04
申请号：US15471212
申请日：2017-03-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Po-Han Huang , Tzu-Hsiang Chen , Shih-Pei Chou , Jiech-Fun Lu
IPC: H01L27/146 , H01L21/762
Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes an epitaxial layer and a dielectric layer. The epitaxial layer and the dielectric layer are formed in a deep trench of a semiconductor substrate. The epitaxial layer covers a lower portion of sidewall of the trench, and the dielectric layer covers an upper portion of the sidewall of the trench. In the method for fabricating the optical isolation structure, at first, shallow trenches are formed in the semiconductor substrate. Then, the dielectric layer is formed in the shallow trenches. Thereafter, deep trenches are formed passing through the dielectric layers. Then, the epitaxial layer is formed in the deep trenches.
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Patent Agency Ranking
公开(公告)号：US20150069253A1
公开(公告)日：2015-03-12
申请号：US14022355
申请日：2013-09-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Ching Huang , Chia-Hao Hsu , Tzu-Hsiang Chen , Chia-Chen Chen
CPC classification number: G01J1/429 , G02B5/0816 , G02B27/0068 , G02F1/21 , G02F1/29 , G02F2203/24
Abstract: Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.
Abstract translation: 本公开的一些实施例涉及形成和操作反射表面以补偿对图案均匀性的像差影响的方法。 在一些实施例中，反射表面包括EUV照明工具的还原光学器件内的反射镜。 在一些实施例中，反射表面包括反射光罩。 包括反射表面的EUV反射表面形貌设置在基板的表面上，并且通过机械力或热变形来操纵。 衬底包括多个空腔，其中每个空腔耦合到变形元件，该变形元件被配置为膨胀空腔的体积，并因此使反射表面的一部分在每个空腔之上变形，以便通过热变形来对反射表面进行局部控制 受到电流的电阻材料或由腔内的加压气体引起的机械变形或压电效应。
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公开(公告)号：US10790326B2
公开(公告)日：2020-09-29
申请号：US16194663
申请日：2018-11-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Seiji Takahashi , Jhy-Jyi Sze , Tzu-Hsiang Chen
IPC: H01L27/146 , H01L27/148 , H01L29/768 , H01L21/02
Abstract: The present disclosure relates to a CMOS image sensor having a pixel device on a deep trench isolation (DTI) structure, and an associated method of formation. In some embodiments, a deep trench isolation (DTI) structure is disposed at a peripheral of a pixel region, extending from a back-side of the substrate to a position within the substrate. A pixel device is disposed at the front-side of the substrate directly overlying the DTI structure. The pixel device comprises a pair of source/drain (S/D) regions disposed within the substrate and reaching on a top surface of the DTI structure. By forming the disclosed pixel device directly overlying the DTI structure to form a SOI device structure, short channel effect is reduced because of the room for pixel device and also because the insulation layer underneath the pixel device. Thus higher device performance can be realized.
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公开(公告)号：US20200098798A1
公开(公告)日：2020-03-26
申请号：US16194663
申请日：2018-11-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Seiji Takahashi , Jhy-Jyi Sze , Tzu-Hsiang Chen
IPC: H01L27/146 , H01L21/02
Abstract: The present disclosure relates to a CMOS image sensor having a pixel device on a deep trench isolation (DTI) structure, and an associated method of formation. In some embodiments, a deep trench isolation (DTI) structure is disposed at a peripheral of a pixel region, extending from a back-side of the substrate to a position within the substrate. A pixel device is disposed at the front-side of the substrate directly overlying the DTI structure. The pixel device comprises a pair of source/drain (S/D) regions disposed within the substrate and reaching on a top surface of the DTI structure. By forming the disclosed pixel device directly overlying the DTI structure to form a SOI device structure, short channel effect is reduced because of the room for pixel device and also because the insulation layer underneath the pixel device. Thus higher device performance can be realized.
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公开(公告)号：US20160370705A1
公开(公告)日：2016-12-22
申请号：US15249989
申请日：2016-08-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
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公开(公告)号：US09429858B2
公开(公告)日：2016-08-30
申请号：US14035268
申请日：2013-09-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
IPC: G03F7/20
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。
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