Invention Grant
US09036431B2 Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device
有权
非易失性存储器件，非易失性存储器件的读取方法以及包含非易失性存储器件的存储器系统
- Patent Title: Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device
- Patent Title (中): 非易失性存储器件，非易失性存储器件的读取方法以及包含非易失性存储器件的存储器系统
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Application No.: US14458800Application Date: 2014-08-13
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Publication No.: US09036431B2Publication Date: 2015-05-19
- Inventor: Chul Bum Kim , Hyung Gon Kim , Chul Ho Lee , Hong Seok Chang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0113468 20101115
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C16/08 ; G11C16/10 ; G11C16/32
Abstract:
A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
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