公开(公告)号：US09036431B2

公开(公告)日：2015-05-19

申请号：US14458800

申请日：2014-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract translation: 一种在非易失性存储器件上执行读取操作的方法包括接收读取命令，接收地址，检测读取使能信号的转换，基于读取使能信号的转换产生选通信号，读取对应于所接收的地址的数据 并且在选通信号切换预定次数之后输出读取的数据。

公开(公告)号：US11803436B2

公开(公告)日：2023-10-31

申请号：US17486341

申请日：2021-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho Lee ,  Ki Jong Nam ,  Won-Gi Hong

IPC: G06F11/00 ,  G06F11/07 ,  G06F3/06 ,  G11C16/10 ,  G01K3/00 ,  G11C16/04 ,  G11C16/26 ,  G06F11/30

CPC classification number: G06F11/076 ,  G01K3/005 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/0727 ,  G06F11/3058 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.

公开(公告)号：USRE49145E1

公开(公告)日：2022-07-19

申请号：US16916750

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C16/08 ,  G11C8/10 ,  G11C7/22 ,  G11C7/10 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US12248360B2

公开(公告)日：2025-03-11

申请号：US18372949

申请日：2023-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Ho Lee ,  Ki Jong Nam ,  Won-Gi Hong

IPC: G06F11/00 ,  G01K3/00 ,  G06F3/06 ,  G06F11/07 ,  G06F11/30 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.

公开(公告)号：USRE48431E1

公开(公告)日：2021-02-09

申请号：US16881822

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C8/10 ,  G11C16/10 ,  G11C16/32 ,  G11C16/08 ,  G11C7/10

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：USRE48013E1

公开(公告)日：2020-05-26

申请号：US15946985

申请日：2018-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C7/10 ,  G11C16/32 ,  G11C16/10 ,  G11C8/10

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US09318172B2

公开(公告)日：2016-04-19

申请号：US14695971

申请日：2015-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32 ,  G11C7/10 ,  G11C8/10

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

公开(公告)号：US20140347942A1

公开(公告)日：2014-11-27

申请号：US14458800

申请日：2014-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Bum Kim ,  Hyung Gon Kim ,  Chul Ho Lee ,  Hong Seok Chang

IPC: G11C7/22

CPC classification number: G11C7/222 ,  G11C7/10 ,  G11C8/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/32

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract translation: 一种在非易失性存储器件上执行读取操作的方法包括接收读取命令，接收地址，检测读取使能信号的转换，基于读取使能信号的转换产生选通信号，读取对应于所接收的地址的数据 并且在选通信号切换预定次数之后输出读取的数据。