发明授权
- 专利标题： Temperature grading for band gap engineering of photovoltaic devices
- 专利标题（中）： 光伏器件带隙工程的温度分级
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申请号： US13295511申请日： 2011-11-14
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公开(公告)号： US09040340B2公开(公告)日： 2015-05-26
- 发明人: Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
- 申请人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/042
- IPC分类号： H01L31/042 ; H01L31/075 ; H01L27/146 ; H01L31/20
摘要：
A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
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