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公开(公告)号：US09040340B2
公开(公告)日：2015-05-26
申请号：US13295511
申请日：2011-11-14
申请人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
发明人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
IPC分类号： H01L31/042 , H01L31/075 , H01L27/146 , H01L31/20
CPC分类号： H01L31/075 , H01L27/14692 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0288 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.
摘要翻译： 一种制造光伏器件的方法包括在第一温度下沉积p型层并沉积本征层，同时逐渐将沉积温度提高到最终温度。 本征层沉积在最终温度下完成。 在本征层上形成n型层。
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公开(公告)号：US08916409B2
公开(公告)日：2014-12-23
申请号：US13275936
申请日：2011-10-18
申请人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Hisham S. Mohamed , Devendra K. Sadana
发明人： Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Hisham S. Mohamed , Devendra K. Sadana
IPC分类号： H01L21/00 , H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02366 , Y02E10/50
摘要： An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.
摘要翻译： 电子设备包括基板和锚定到基板的多个颗粒。 在颗粒上形成电极材料，并且构造成在颗粒上形成峰。 一个或多个操作层被雾化在电极材料上，用于执行器件功能。
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公开(公告)号：US08859321B2
公开(公告)日：2014-10-14
申请号：US13017671
申请日：2011-01-31
IPC分类号： H01L21/00 , H01L31/076 , H01L31/18
CPC分类号： H01L31/076 , H01L31/18 , Y02E10/548
摘要： Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.
摘要翻译： 串联光伏器件的制造包括在其间形成具有N型层，P型层和底部本征层的底部电池。 相对于底部单元形成顶部单元。 顶部单元具有N型层，P型层和顶层本征层。 顶部本征层由在不同于底部本征层的温度沉积的未掺杂材料形成，使得顶部本征层和底部本征层的带隙能量对于每个单元而言逐渐降低。
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公开(公告)号：US20130019929A1
公开(公告)日：2013-01-24
申请号：US13185860
申请日：2011-07-19
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022475 , H01L31/022483 , H01L31/03767 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A device and method for reducing degradation in a photovoltaic device includes adjusting a band offset of the device during one or more of forming an electrode, forming a first doped layer or forming an intrinsic layer. The adjusting reduces a band offset between one or more of the electrode, the first doped layer and the intrinsic layer to reduce light-induced degradation of the device. A second doped layer is formed on the intrinsic layer.
摘要翻译： 用于降低光伏器件劣化的器件和方法包括在形成电极，形成第一掺杂层或形成本征层的一个或多个期间调整器件的带偏移。 该调整减小了电极，第一掺杂层和本征层中的一个或多个之间的带偏移，以减少光诱导的器件劣化。 在本征层上形成第二掺杂层。
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5.发明申请公开(公告)号：US20120318339A1
公开(公告)日：2012-12-20
申请号：US13599591
申请日：2012-08-30
IPC分类号： H01L31/075
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/1816 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.
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6.发明授权Solar cell employing an enhanced free hole density p-doped material and methods for forming the same 有权使用增强的自由空穴密度p掺杂材料的太阳能电池及其形成方法公开(公告)号：US08866003B2
公开(公告)日：2014-10-21
申请号：US13599591
申请日：2012-08-30
IPC分类号： H01L31/0288 , H01L31/18 , H01L31/0368 , H01L31/075 , H01L31/0224 , H01L31/0376 , H01L31/0392
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/1816 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.
摘要翻译： 使用载气内的惰性气体形成光伏器件的p掺杂半导体层。 载气内的惰性气体的存在增加了p掺杂半导体层内的自由空穴密度。 这降低了在与透明导电材料层的界面处的肖特基势垒，从而显着降低了光伏器件的串联电阻。 串联电阻的降低增加了光伏器件的开路电压，填充因子和效率。 如果p掺杂半导体层也掺杂有碳，并且具有大于1.85V的带隙，则该效果更加突出。 如果载气包括H 2和惰性气体的混合物，则p掺杂半导体层的p掺杂半导体材料可以被氢化。
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7.发明申请SOLAR CELL EMPLOYING AN ENHANCED FREE HOLE DENSITY P-DOPED MATERIAL AND METHODS FOR FORMING THE SAME 审中-公开使用增强型自由孔密度P型材料的太阳能电池及其形成方法公开(公告)号：US20120012167A1
公开(公告)日：2012-01-19
申请号：US12835238
申请日：2010-07-13
IPC分类号： H01L31/0288 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/1816 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.
摘要翻译： 使用载气内的惰性气体形成光伏器件的p掺杂半导体层。 载气内的惰性气体的存在增加了p掺杂半导体层内的自由空穴密度。 这降低了在与透明导电材料层的界面处的肖特基势垒，从而显着降低了光伏器件的串联电阻。 串联电阻的降低增加了光伏器件的开路电压，填充因子和效率。 如果p掺杂半导体层也掺杂有碳，并且具有大于1.85V的带隙，则该效果更加突出。 如果载气包括H 2和惰性气体的混合物，则p掺杂半导体层的p掺杂半导体材料可以被氢化。
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公开(公告)号：US20130224899A1
公开(公告)日：2013-08-29
申请号：US13406970
申请日：2012-02-28
IPC分类号： H01L31/18
CPC分类号： H01L31/1884 , C23C16/22 , H01L31/02167 , H01L31/075 , H01L31/204 , Y02E10/548
摘要： Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 用于形成光伏器件的方法包括调整用于在透明电极上沉积包括锗的缓冲层的沉积功率。 沉积功率被配置为提高器件效率。 在缓冲层上形成p型层。 在p型层上形成本征层和n型层。
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9.发明申请PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME 审中-公开具有接口带隙修改结构的光电装置及其形成方法公开(公告)号：US20120031477A1
公开(公告)日：2012-02-09
申请号：US12850272
申请日：2010-08-04
申请人： Keith E. Fogel , Jee H. Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
发明人： Keith E. Fogel , Jee H. Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/108 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/028 , H01L31/056 , H01L31/07 , H01L31/075 , H01L31/20 , H01L2031/0344 , Y02E10/52 , Y02E10/548
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
摘要翻译： 在p掺杂半导体层和光伏器件的透明导电材料层之间提供肖特基势垒减少层。 肖特基势垒减少层可以是具有大于透明导电材料层的功函数的功函数的导电材料层。 导电材料层可以是诸如碳纳米管层或石墨烯层的碳材料层。 或者，导电材料层可以是具有比透明导电材料层更大的功函数的另一透明导电材料层。 肖特基势垒的减小降低了透明材料层和p掺杂半导体层的接触电阻，从而降低了串联电阻并提高了光伏器件的效率。
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10.发明申请HIGH WORK FUNCTION METAL INTERFACIAL FILMS FOR IMPROVING FILL FACTOR IN SOLAR CELLS 审中-公开用于改善太阳能电池中填充因子的高功能金属界面膜公开(公告)号：US20110272010A1
公开(公告)日：2011-11-10
申请号：US12776549
申请日：2010-05-10
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0232
CPC分类号： H01L31/03921 , H01L31/022483 , H01L31/022491 , Y02E10/50
摘要： A photovoltaic device and method include a doped transparent electrode, and a light-absorbing semiconductor structure including a first semiconductor layer. An ultra-thin layer of a non-transparent metal is formed between the transparent electrode and the first semiconductor layer to form a reduced barrier contact wherein the ultra-thin layer is light transmissive. When the ultrathin metal forms discrete individual dots, it permits a plasmonic light trapping effect to increase the current at solar cells.
摘要翻译： 光电器件和方法包括掺杂透明电极和包括第一半导体层的光吸收半导体结构。 在透明电极和第一半导体层之间形成非透明金属的超薄层，以形成减薄的屏障接触，其中超薄层是透光的。 当超薄金属形成离散的单个点时，它允许等离激元光捕获效应来增加太阳能电池的电流。
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