发明授权
US09040955B2 Semiconductor device, optical sensor device and semiconductor device manufacturing method
有权
半导体装置，光传感器装置及半导体装置的制造方法
- 专利标题： Semiconductor device, optical sensor device and semiconductor device manufacturing method
- 专利标题（中）： 半导体装置，光传感器装置及半导体装置的制造方法
-
申请号： US13505226申请日： 2011-05-19
-
公开(公告)号： US09040955B2公开(公告)日： 2015-05-26
- 发明人: Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
- 申请人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; George L. Howarah
- 优先权： JP2010-128162 20100603
- 国际申请： PCT/JP2011/061519 WO 20110519
- 国际公布： WO2011/152220 WO 20111208
- 主分类号： H01L31/0352
- IPC分类号： H01L31/0352 ; H01L31/105 ; B82Y20/00
摘要：
Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.
公开/授权文献
信息查询
IPC分类:
