公开(公告)号：US09040955B2

公开(公告)日：2015-05-26

申请号：US13505226

申请日：2011-05-19

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/105 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US20130099203A1

公开(公告)日：2013-04-25

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中在从包括1.3μm到长波长侧的短波长侧的近红外区域上抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20120298957A1

公开(公告)日：2012-11-29

申请号：US13520007

申请日：2011-03-10

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

摘要翻译： 本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。 光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至 通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离， 在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

公开(公告)号：US20120217478A1

公开(公告)日：2012-08-30

申请号：US13505226

申请日：2011-05-19

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US08822977B2

公开(公告)日：2014-09-02

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L29/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20130048838A1

公开(公告)日：2013-02-28

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38和nlE; x＆lt; lE; 0.68）层和GaAs1-ySby（0.25＆amp; nlE; y＆nlE; 0.73）层的层的叠层结构，并且在GaAs1 -ySby层，InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US08921829B2

公开(公告)日：2014-12-30

申请号：US13520007

申请日：2011-03-10

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L29/06 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

摘要翻译： 本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。 光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至 通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离， 在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

公开(公告)号：US08642943B2

公开(公告)日：2014-02-04

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US20130313521A1

公开(公告)日：2013-11-28

申请号：US14000187

申请日：2012-02-03

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L31/0352

CPC分类号： H01L31/035209 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

摘要翻译： 本发明的一个目的是提供例如在1.5μm至1.8μm的近红外波长范围内具有足够高灵敏度的光电二极管，并且可以具有低暗电流。 根据本发明的光电二极管（10）包括位于InP衬底（1）上并与InP衬底（1）接触的缓冲层（2）和位于缓冲层上并与缓冲层接触的吸收层（3），其中吸收 层包括50个或更多对，其中第一半导体层3a和第二半导体层3b构成单对，第一半导体层3a的带隙能为0.73eV以下，第二半导体层3b的带隙能量比 第一半导体层3a，第一半导体层3a和第二半导体层3b构成应变补偿量子阱结构，并且各自具有1nm以上且10nm以下的厚度。

公开(公告)号：US20130032780A1

公开(公告)日：2013-02-07

申请号：US13581863

申请日：2011-09-28

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14652 ,  H01L29/15 ,  H01L31/105 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate 1, and includes a pixel P. The photodiode includes an absorption layer 3 of a type II MQW structure, which is located on the substrate 1. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers 3a and 3b. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer 3a has a higher potential of a valence band, is thinner than the thickness of the other layer 3b.

摘要翻译： 提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。 光电二极管形成在III-V族化合物半导体衬底1上，并且包括像素P.光电二极管包括位于衬底1上的II型MQW结构的吸收层3.MWW结构包括五十个或更多个 两组不同类型的III-V族化合物半导体层3a和3b。 两层不同类型的III-V族化合物半导体层之一的厚度，其中层3a具有较高的价带电势，其厚度比另一层3b的厚度薄。