Invention Grant
- Patent Title: Light-emitting diode and method of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14098687Application Date: 2013-12-06
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Publication No.: US09041038B2Publication Date: 2015-05-26
- Inventor: Jin Woong Lee , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Tae Kyoon Kim
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates PLC
- Priority: KR10-2012-0144514 20121212
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/20 ; H01L33/46 ; H01L23/00

Abstract:
Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Public/Granted literature
- US20140159089A1 LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-06-12
Information query
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