公开(公告)号：US11749784B2

公开(公告)日：2023-09-05

申请号：US17118731

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.

公开(公告)号：US09978910B2

公开(公告)日：2018-05-22

申请号：US15219086

申请日：2016-07-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

公开(公告)号：US09608165B2

公开(公告)日：2017-03-28

申请号：US14795167

申请日：2015-07-09

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/20

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

公开(公告)号：US09401456B2

公开(公告)日：2016-07-26

申请号：US14740131

申请日：2015-06-15

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

公开(公告)号：US08963183B2

公开(公告)日：2015-02-24

申请号：US13760637

申请日：2013-02-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang-Hyun Oh ,  Jin Woong Lee

IPC: H01L33/00 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.

Abstract translation: 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色，绿色和红色光具有至少90％的反射率。

公开(公告)号：US11411142B2

公开(公告)日：2022-08-09

申请号：US17025273

申请日：2020-09-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

IPC: H01L33/40 ,  H01L51/10 ,  H01S5/125

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

公开(公告)号：US10937935B2

公开(公告)日：2021-03-02

申请号：US16453332

申请日：2019-06-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Keum Ju Lee

IPC: H01L33/62 ,  H01L33/24 ,  H01L33/46 ,  H01L33/42 ,  F21Y115/10 ,  F21K9/232

Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.

公开(公告)号：US10559715B2

公开(公告)日：2020-02-11

申请号：US16259478

申请日：2019-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US10243109B2

公开(公告)日：2019-03-26

申请号：US15965757

申请日：2018-04-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/20

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

公开(公告)号：US20180323346A1

公开(公告)日：2018-11-08

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang

IPC: H01L33/42 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  G02F1/1335

CPC classification number: H01L33/42 ,  G02F1/133603 ,  H01L33/007 ,  H01L33/10 ,  H01L33/32 ,  H01L33/325 ,  H01L33/387 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.