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公开(公告)号：US10608141B2
公开(公告)日：2020-03-31
申请号：US15936321
申请日：2018-03-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US20180166608A1
公开(公告)日：2018-06-14
申请号：US15843847
申请日：2017-12-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Duk Il Suh , Ye Seul Kim , Kyoung Wan Kim , Sang Won Woo , Ji Hye Kim
Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
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公开(公告)号：US09929314B2
公开(公告)日：2018-03-27
申请号：US15336510
申请日：2016-10-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US09851056B2
公开(公告)日：2017-12-26
申请号：US15348192
申请日：2016-11-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Sang Won Woo , Ji Hye Kim
IPC: H01L33/24 , H01L33/46 , H01L33/50 , F21K9/232 , H01L33/32 , H01L33/06 , H01L33/38 , H01L33/62 , H01L33/42 , H01L33/00 , H01L25/075 , H05K1/18 , G06F1/16 , F21Y107/70
CPC classification number: F21K9/232 , F21Y2107/70 , G06F1/1662 , H01L25/0753 , H01L33/0033 , H01L33/0095 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2224/73204 , H01L2933/0016 , H01L2933/0025 , H05K1/189 , H05K2201/10106
Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.
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公开(公告)号：US20160380157A1
公开(公告)日：2016-12-29
申请号：US15263000
申请日：2016-09-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duk Il SUH , Jae Moo Kim , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee
CPC classification number: H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The LED includes a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector including a first laminate structure including alternately stacked SiO2 and Nb2O5 layers. The first laminate structure of the first distributed Bragg reflector is configured to reflect at least 90% of a first wavelength range of blue light emitted from the light emitting structure.
Abstract translation: 发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电型半导体层; 第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层。 所述LED包括布置在所述基板的与所述第一表面相对的第二表面上的第一分布式布拉格反射器，所述第一分布布拉格反射器包括包括交替堆叠的SiO 2和Nb 2 O 5层的第一层压结构。 第一分布式布拉格反射器的第一层压结构被配置为反射从发光结构发射的蓝色光的第一波长范围的至少90％。
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Patent Agency Ranking
公开(公告)号：US09520536B2
公开(公告)日：2016-12-13
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US20160118564A1
公开(公告)日：2016-04-28
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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8.发明申请公开(公告)号：US20140110666A1
公开(公告)日：2014-04-24
申请号：US14126638
申请日：2012-06-15
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duck II Suh , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim
CPC classification number: H01L33/24 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0091
Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。
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公开(公告)号：US10937925B2
公开(公告)日：2021-03-02
申请号：US16426205
申请日：2019-05-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim
Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength λ of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25λ and less than 0.3λ, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25λ, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
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公开(公告)号：US10804437B2
公开(公告)日：2020-10-13
申请号：US15767284
申请日：2016-06-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Sang Won Woo , Kyoung Wan Kim
Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
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