-
公开(公告)号：US09608165B2
公开(公告)日：2017-03-28
申请号：US14795167
申请日：2015-07-09
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan Kim , Tae Kyoon Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee , In Soo Kim
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
-
Patent Agency Ranking
公开(公告)号：US09202968B2
公开(公告)日：2015-12-01
申请号：US14083856
申请日：2013-11-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Tae Kyoon Kim , Tae Hyuk Im
CPC classification number: H01L33/0079
Abstract: Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.
Abstract translation: 提供一种制造垂直发光二极管（LED）的方法。 首先，在生长衬底的前表面上形成包括有源层的半导体结构层。 在半导体结构层上形成导电支撑基板。 研磨生长衬底的后表面以减小生长衬底的厚度。 干燥蚀刻由于磨损而使厚度减小的生长衬底的后表面以除去生长衬底。
-
公开(公告)号：US09112102B2
公开(公告)日：2015-08-18
申请号：US14067455
申请日：2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan Kim , Tae Kyoon Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee , In Soo Kim
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
-
公开(公告)号：US10084112B2
公开(公告)日：2018-09-25
申请号：US15469253
申请日：2017-03-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan Kim , Tae Kyoon Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee , In Soo Kim
CPC classification number: H01L33/20 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/385 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
-
公开(公告)号：US09202984B2
公开(公告)日：2015-12-01
申请号：US14721224
申请日：2015-05-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong Lee , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Tae Kyoon Kim
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 1.一种发光二极管（LED），包括包括第一半导体层，有源层和第二半导体层的半导体堆叠结构，设置在基板上的半导体堆叠，设置在半导体堆叠结构上的导电基板和电极 设置在导电衬底上并与导电衬底欧姆接触，其中电极包括穿透电极的沟槽和导电衬底的一部分。
-
公开(公告)号：US09041038B2
公开(公告)日：2015-05-26
申请号：US14098687
申请日：2013-12-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong Lee , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Tae Kyoon Kim
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 本发明的示例性实施例公开了一种包括半导体堆叠结构的发光二极管（LED），其包括第一半导体层，有源层和第二半导体层，设置在基板上的半导体堆叠， 半导体堆叠结构，以及设置在导电衬底上并与导电衬底欧姆接触的电极，其中电极包括穿透电极和导电衬底的一部分的沟槽。
-
-
-
-
-
Search Results
6
records
(took 0.081 seconds)
