Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US14020905Application Date: 2013-09-09
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Publication No.: US09041155B2Publication Date: 2015-05-26
- Inventor: Chao-Sheng Cheng , Kai-Ling Chiu , Chih-Yu Tseng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L23/522 ; H01L27/08 ; H01L27/02

Abstract:
A semiconductor structure includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units and each first unit includes a plurality of first finger electrodes. The second capacitor includes a plurality of second units and each second unit includes a plurality of second finger electrodes. The first units and the second units are alternately arranged to form an array. The semiconductor structure further includes a plurality of first connecting lines and a plurality of second connecting lines being parallel with each other. The first connecting lines are electrically connected to the first finger electrodes, and the second connecting lines are electrically connected to the second finger electrodes. The first finger electrodes and its adjacent first connecting lines form a straight line, and the second finger electrodes and its adjacent second connecting lines form another straight line.
Public/Granted literature
- US20140008762A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2014-01-09
Information query
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