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公开(公告)号：US09041155B2
公开(公告)日：2015-05-26
申请号：US14020905
申请日：2013-09-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chao-Sheng Cheng , Kai-Ling Chiu , Chih-Yu Tseng
IPC: H01L21/02 , H01L49/02 , H01L23/522 , H01L27/08 , H01L27/02
CPC classification number: H01L28/40 , H01L23/5223 , H01L23/5225 , H01L27/0207 , H01L27/0805 , H01L28/88 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor structure includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units and each first unit includes a plurality of first finger electrodes. The second capacitor includes a plurality of second units and each second unit includes a plurality of second finger electrodes. The first units and the second units are alternately arranged to form an array. The semiconductor structure further includes a plurality of first connecting lines and a plurality of second connecting lines being parallel with each other. The first connecting lines are electrically connected to the first finger electrodes, and the second connecting lines are electrically connected to the second finger electrodes. The first finger electrodes and its adjacent first connecting lines form a straight line, and the second finger electrodes and its adjacent second connecting lines form another straight line.
Abstract translation: 半导体结构包括第一电容器和第二电容器。 第一电容器包括多个第一单元，并且每个第一单元包括多个第一指状电极。 第二电容器包括多个第二单元，并且每个第二单元包括多个第二指状电极。 第一单元和第二单元交替布置以形成阵列。 半导体结构还包括彼此平行的多个第一连接线和多个第二连接线。 第一连接线与第一指状电极电连接，第二连接线与第二指状电极电连接。 第一指状电极及其相邻的第一连接线形成直线，第二指状电极及其相邻的第二连接线形成另一条直线。
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公开(公告)号：US20140097890A1
公开(公告)日：2014-04-10
申请号：US13647392
申请日：2012-10-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Tzung-Lin Li , Chun-Chang Wu , Chih-Yu Tseng
CPC classification number: H01L28/40 , H01L23/481 , H01L23/5223 , H01L23/5227 , H01L23/64 , H01L25/0657 , H01L28/10 , H01L2224/48091 , H01L2225/06506 , H01L2225/06513 , H01L2225/06527 , H01L2225/06544 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.
Abstract translation: 本发明提供一种包括基板，第一TSV，电感器和电容器的半导体结构。 第一TSV设置在基板中并且具有第一信号。 电感器设置在基板中。 电容器电连接到电感器以形成LC电路以绕过来自第一信号的噪声。 本发明还提供一种降低半导体结构中的信号噪声的方法。
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公开(公告)号：US20140008762A1
公开(公告)日：2014-01-09
申请号：US14020905
申请日：2013-09-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chao-Sheng Cheng , Kai-Ling Chiu , Chih-Yu Tseng
IPC: H01L49/02
CPC classification number: H01L28/40 , H01L23/5223 , H01L23/5225 , H01L27/0207 , H01L27/0805 , H01L28/88 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor structure includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units and each first unit includes a plurality of first finger electrodes. The second capacitor includes a plurality of second units and each second unit includes a plurality of second finger electrodes. The first units and the second units are alternately arranged to form an array. The semiconductor structure further includes a plurality of first connecting lines and a plurality of second connecting lines being parallel with each other. The first connecting lines are electrically connected to the first finger electrodes, and the second connecting lines are electrically connected to the second finger electrodes. The first finger electrodes and its adjacent first connecting lines form a straight line, and the second finger electrodes and its adjacent second connecting lines form another straight line.
Abstract translation: 半导体结构包括第一电容器和第二电容器。 第一电容器包括多个第一单元，并且每个第一单元包括多个第一指状电极。 第二电容器包括多个第二单元，并且每个第二单元包括多个第二指状电极。 第一单元和第二单元交替布置以形成阵列。 半导体结构还包括彼此平行的多个第一连接线和多个第二连接线。 第一连接线与第一指状电极电连接，第二连接线与第二指状电极电连接。 第一指状电极及其相邻的第一连接线形成直线，第二指状电极及其相邻的第二连接线形成另一条直线。
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公开(公告)号：US08912844B2
公开(公告)日：2014-12-16
申请号：US13647392
申请日：2012-10-09
Applicant: United Microelectronics Corp.
Inventor： Tzung-Lin Li , Chun-Chang Wu , Chih-Yu Tseng
IPC: H03K5/00
CPC classification number: H01L28/40 , H01L23/481 , H01L23/5223 , H01L23/5227 , H01L23/64 , H01L25/0657 , H01L28/10 , H01L2224/48091 , H01L2225/06506 , H01L2225/06513 , H01L2225/06527 , H01L2225/06544 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: The present invention provides a semiconductor structure, including a substrate, a first TSV, an inductor and a capacitor. The first TSV is disposed in the substrate and has a first signal. The inductor is disposed in the substrate. The capacitor is electrically connected to the inductor to form an LC circuit to bypass the noise from the first signal. The present invention further provides a method of reducing the signal noise in a semiconductor structure.
Abstract translation: 本发明提供一种包括基板，第一TSV，电感器和电容器的半导体结构。 第一TSV设置在基板中并且具有第一信号。 电感器设置在基板中。 电容器电连接到电感器以形成LC电路以绕过来自第一信号的噪声。 本发明还提供一种降低半导体结构中的信号噪声的方法。
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