发明授权
- 专利标题: Non-volatile memory including reference signal path
- 专利标题(中): 非易失性存储器包括参考信号路径
-
申请号: US13596934申请日: 2012-08-28
-
公开(公告)号: US09042154B2公开(公告)日: 2015-05-26
- 发明人: Xinwei Guo , Richard E Fackenthal
- 申请人: Xinwei Guo , Richard E Fackenthal
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C5/14 ; G11C11/56 ; G11C13/00 ; G11C16/26 ; G11C29/02
摘要:
Some embodiments include apparatuses and methods having a first memory element and a first select component coupled to the first memory element, a second memory element and a second select component coupled to the second memory element, and an access line shared by the first and second select components. At least one of the embodiments can include a circuit to generate a signal indicating a state of the second memory element based on a first signal developed from a first signal path through the first memory element and a second signal developed from a second signal path through the second memory element.
公开/授权文献
- US20140063897A1 NON-VOLATILE MEMORY INCLUDING REFERENCE SIGNAL PATH 公开/授权日:2014-03-06
信息查询