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公开(公告)号：US20140063897A1
公开(公告)日：2014-03-06
申请号：US13596934
申请日：2012-08-28
申请人： Xinwei Guo , Richard E. Fackenthal
发明人： Xinwei Guo , Richard E. Fackenthal
IPC分类号： G11C11/21
CPC分类号： G11C13/0021 , G11C5/147 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C16/26 , G11C29/021 , G11C29/028 , G11C2013/0054 , G11C2211/5634 , G11C2211/5645
摘要： Some embodiments include apparatuses and methods having a first memory element and a first select component coupled to the first memory element, a second memory element and a second select component coupled to the second memory element, and an access line shared by the first and second select components. At least one of the embodiments can include a circuit to generate a signal indicating a state of the second memory element based on a first signal developed from a first signal path through the first memory element and a second signal developed from a second signal path through the second memory element.
摘要翻译： 一些实施例包括具有第一存储器元件和耦合到第一存储器元件的第一选择元件，耦合到第二存储器元件的第二存储元件和第二选择元件的装置和方法，以及由第一和第二选择 组件。 实施例中的至少一个可以包括基于从通过第一存储器元件的第一信号路径产生的第一信号产生指示第二存储器元件的状态的信号的电路以及从第二信号路径产生的第二信号 第二存储元件。
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公开(公告)号：US09267980B2
公开(公告)日：2016-02-23
申请号：US13210264
申请日：2011-08-15
CPC分类号： G01R31/028 , G01R31/024 , G01R31/025 , G11C29/02 , G11C29/025 , G11C29/50016 , G11C2029/5006
摘要： Apparatus and methods for evaluating leakage currents of capacitances are described. Capacitances having excessive leakage currents may be disabled from use. An example apparatus includes a leakage detection circuit configured to be coupled to a capacitance block. The leakage detection circuit is configured to determine whether a leakage current of a capacitance of the capacitance block exceeds a current limit and is further configured to provide an output indicative of a status of the capacitance. A detection controller is coupled to the leakage detection circuit and a register, and the detection controller is configured to store data in the register indicative of the status of the capacitance based at least in part on the signal from the leakage detection circuit.
摘要翻译： 描述用于评估电容的漏电流的装置和方法。 具有过大漏电流的电容可能会被禁止使用。 示例性装置包括被配置为耦合到电容块的泄漏检测电路。 泄漏检测电路被配置为确定电容块的电容的漏电流是否超过电流限制，并且还被配置为提供指示电容状态的输出。 检测控制器耦合到泄漏检测电路和寄存器，并且检测控制器被配置为至少部分地基于来自泄漏检测电路的信号将数据存储在指示电容状态的寄存器中。
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公开(公告)号：US20130028014A1
公开(公告)日：2013-01-31
申请号：US13194831
申请日：2011-07-29
申请人： Xinwei Guo , Mingdong Cui
发明人： Xinwei Guo , Mingdong Cui
CPC分类号： G11C13/004 , G05F1/461 , G05F3/16 , G11C5/147 , G11C7/062 , G11C7/14 , G11C8/08 , G11C13/0004 , G11C13/0038 , G11C2013/0054
摘要： Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which may be a PCM memory cell. The sensing circuits may include a cascode transistor. Examples of reference voltage generators may include a global reference voltage generator coupled to multiple bank reference voltage generators which may reduce an output resistance of the voltage generator routing.
摘要翻译： 所描述的示例包括用于向感测电路提供参考电压的感测电路和参考电压发生器。 感测电路可以感测可以是PCM存储器单元的存储器单元的状态。 感测电路可以包括共源共栅晶体管。 参考电压发生器的示例可以包括耦合到多个组参考电压发生器的全局参考电压发生器，其可以减小电压发生器路由的输出电阻。
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公开(公告)号：US20090079403A1
公开(公告)日：2009-03-26
申请号：US11902921
申请日：2007-09-26
申请人： Jun Xu , Xinwei Guo , Gerald Barkley
发明人： Jun Xu , Xinwei Guo , Gerald Barkley
IPC分类号： G05F1/565
摘要： An apparatus is provided that includes a voltage generator to produce a voltage that compensates for temperature variation and a current source that generates a current reference based on the voltage from the voltage generator.
摘要翻译： 提供了一种装置，其包括电压发生器以产生补偿温度变化的电压和基于来自电压发生器的电压产生电流参考的电流源。
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公开(公告)号：US09042154B2
公开(公告)日：2015-05-26
申请号：US13596934
申请日：2012-08-28
申请人： Xinwei Guo , Richard E Fackenthal
发明人： Xinwei Guo , Richard E Fackenthal
CPC分类号： G11C13/0021 , G11C5/147 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C16/26 , G11C29/021 , G11C29/028 , G11C2013/0054 , G11C2211/5634 , G11C2211/5645
摘要： Some embodiments include apparatuses and methods having a first memory element and a first select component coupled to the first memory element, a second memory element and a second select component coupled to the second memory element, and an access line shared by the first and second select components. At least one of the embodiments can include a circuit to generate a signal indicating a state of the second memory element based on a first signal developed from a first signal path through the first memory element and a second signal developed from a second signal path through the second memory element.
摘要翻译： 一些实施例包括具有第一存储器元件和耦合到第一存储器元件的第一选择元件，耦合到第二存储器元件的第二存储元件和第二选择元件的装置和方法，以及由第一和第二选择 组件。 实施例中的至少一个可以包括基于从通过第一存储器元件的第一信号路径产生的第一信号产生指示第二存储器元件的状态的信号的电路以及从第二信号路径产生的第二信号 第二存储器元件。
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公开(公告)号：US08698480B2
公开(公告)日：2014-04-15
申请号：US13170029
申请日：2011-06-27
申请人： Mingdong Cui , Xinwei Guo
发明人： Mingdong Cui , Xinwei Guo
IPC分类号： G05F1/10
CPC分类号： G11C13/004 , G11C7/14
摘要： Example reference current distribution circuitry described herein include current mirrors having resistive elements of varying sizes between gate nodes of sense amplifier transistors along a voltage distribution line. Examples of counter coupling capacitances which may be coupled to the gate nodes of sense amplifier transistors are also described.
摘要翻译： 本文描述的示例性参考电流分配电路包括电流镜，其具有沿着电压分配线的读出放大器晶体管的栅极节点之间具有不同大小的电阻元件 还描述了可耦合到读出放大器晶体管的栅极节点的计数耦合电容的示例。
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公开(公告)号：US20080238518A1
公开(公告)日：2008-10-02
申请号：US11692325
申请日：2007-03-28
申请人： Xinwei Guo , Gerald J. Barkley , Jun Xu
发明人： Xinwei Guo , Gerald J. Barkley , Jun Xu
IPC分类号： H03K3/013
CPC分类号： H03K3/011
摘要： According to some embodiments, a process, voltage, and temperature compensated clock generator is disclosed. The clock generator may be a charge-charge clock generator including a first load capacitive element and a second load capacitive element. A process, voltage, and temperature compensated current source is coupled to the charge-charge clock generator, and is used to charge the first load capacitive element and the second load capacitive element.
摘要翻译： 根据一些实施例，公开了一种工艺，电压和温度补偿的时钟发生器。 时钟发生器可以是包括第一负载电容元件和第二负载电容元件的充电时钟发生器。 过程，电压和温度补偿电流源耦合到充电时钟发生器，并且用于对第一负载电容元件和第二负载电容元件充电。
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公开(公告)号：US20130043889A1
公开(公告)日：2013-02-21
申请号：US13210264
申请日：2011-08-15
IPC分类号： G01R27/26
CPC分类号： G01R31/028 , G01R31/024 , G01R31/025 , G11C29/02 , G11C29/025 , G11C29/50016 , G11C2029/5006
摘要： Apparatus and methods for evaluating leakage currents of capacitances are described. Capacitances having excessive leakage currents may be disabled from use. An example apparatus includes a leakage detection circuit configured to be coupled to a capacitance block. The leakage detection circuit is configured to determine whether a leakage current of a capacitance of the capacitance block exceeds a current limit and is further configured to provide an output indicative of a status of the capacitance. A detection controller is coupled to the leakage detection circuit and a register, and the detection controller is configured to store data in the register indicative of the status of the capacitance based at least in part on the signal from the leakage detection circuit.
摘要翻译： 描述用于评估电容的漏电流的装置和方法。 具有过大漏电流的电容可能会被禁止使用。 示例性装置包括被配置为耦合到电容块的泄漏检测电路。 泄漏检测电路被配置为确定电容块的电容的漏电流是否超过电流限制，并且还被配置为提供指示电容状态的输出。 检测控制器耦合到泄漏检测电路和寄存器，并且检测控制器被配置为至少部分地基于来自泄漏检测电路的信号将数据存储在指示电容状态的寄存器中。
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公开(公告)号：US20120326765A1
公开(公告)日：2012-12-27
申请号：US13170029
申请日：2011-06-27
申请人： Mingdong Cui , Xinwei Guo
发明人： Mingdong Cui , Xinwei Guo
IPC分类号： H03K17/687
CPC分类号： G11C13/004 , G11C7/14
摘要： Example reference current distribution circuitry described herein include current mirrors having resistive elements of varying sizes between gate nodes of sense amplifier transistors along a voltage distribution line. Examples of counter coupling capacitances which may be coupled to the gate nodes of sense amplifier transistors are also described.
摘要翻译： 本文描述的示例性参考电流分配电路包括电流镜，其具有沿着电压分配线的读出放大器晶体管的栅极节点之间具有不同大小的电阻元件 还描述了可耦合到读出放大器晶体管的栅极节点的计数耦合电容的示例。
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公开(公告)号：US08737120B2
公开(公告)日：2014-05-27
申请号：US13194831
申请日：2011-07-29
申请人： Xinwei Guo , Mingdong Cui
发明人： Xinwei Guo , Mingdong Cui
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G05F1/461 , G05F3/16 , G11C5/147 , G11C7/062 , G11C7/14 , G11C8/08 , G11C13/0004 , G11C13/0038 , G11C2013/0054
摘要： Described examples include sensing circuits and reference voltage generators for providing a reference voltage to a sensing circuit. The sensing circuits may sense a state of a memory cell, which may be a PCM memory cell. The sensing circuits may include a cascode transistor. Examples of reference voltage generators may include a global reference voltage generator coupled to multiple bank reference voltage generators which may reduce an output resistance of the voltage generator routing.
摘要翻译： 所描述的示例包括用于向感测电路提供参考电压的感测电路和参考电压发生器。 感测电路可以感测可以是PCM存储器单元的存储器单元的状态。 感测电路可以包括共源共栅晶体管。 参考电压发生器的示例可以包括耦合到多个组参考电压发生器的全局参考电压发生器，其可以减小电压发生器路由的输出电阻。
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