发明授权
US09045363B2 Low-E panels with ternary metal oxide dielectric layer and method for forming the same 有权
具有三元金属氧化物介电层的低E面板及其形成方法

Low-E panels with ternary metal oxide dielectric layer and method for forming the same
摘要:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
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