发明授权
US09045363B2 Low-E panels with ternary metal oxide dielectric layer and method for forming the same
有权
具有三元金属氧化物介电层的低E面板及其形成方法
- 专利标题: Low-E panels with ternary metal oxide dielectric layer and method for forming the same
- 专利标题(中): 具有三元金属氧化物介电层的低E面板及其形成方法
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申请号: US13338018申请日: 2011-12-27
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公开(公告)号: US09045363B2公开(公告)日: 2015-06-02
- 发明人: Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
- 申请人: Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
- 申请人地址: US CA San Jose US MI Auburn Hills
- 专利权人: Intermolecular, Inc.,Guardian Industries Corp.
- 当前专利权人: Intermolecular, Inc.,Guardian Industries Corp.
- 当前专利权人地址: US CA San Jose US MI Auburn Hills
- 主分类号: C03C17/23
- IPC分类号: C03C17/23 ; C03C17/34 ; C03C17/36
摘要:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
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