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20 条记录 (耗时 0.017 秒)

    Method for delivering sports telemetry for a curling game
    1.
    发明授权
    Method for delivering sports telemetry for a curling game 有权

    公开(公告)号：US10814208B2

    公开(公告)日：2020-10-27

    申请号：US16380471

    申请日：2019-04-10

    申请人： Howard Thaw ,  Chun Mei Gao ,  Ian Kennneth MacAulay ,  Minh Anh Nguyen

    发明人： Howard Thaw ,  Chun Mei Gao ,  Ian Kennneth MacAulay ,  Minh Anh Nguyen

    IPC分类号： A63B71/06 ,  A63B67/14 ,  A63B24/00 ,  H04B1/38

    摘要： A method for delivering sports telemetry for a curling game provides players, coaches, and viewers with the detailed dynamics of a curling stone. The method is generalized to at least one computerized sports equipment in communication with at least one remote server. A sensing module of the sports equipment captures and sends an angular-motion measurement and a linear-motion measurement to the remote server. Further, a tracking module of the sports equipment sends a precise location reading to the remote server. The angular-motion measurement, the linear-motion measurement, and the precise location reading are compiled into a sports telemetry data. Subsequently, the sports telemetry data assess a plurality of summarization metrics which promotes game awareness and interest. Further, the sports telemetry data also generates at least one equipment motion animation of play-by-play breakdown of the game. Finally, an online view platform allows the general public to access the sports telemetry data.

    H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
    10.
    发明授权
    H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift 有权
    基于H2的等离子体处理，以消除批次间和批次间蚀刻漂移

    公开(公告)号：US07727906B1

    公开(公告)日：2010-06-01

    申请号：US11493679

    申请日：2006-07-26

    申请人： Sunil Shanker ,  Chi-I Lang ,  Minh Anh Nguyen ,  Judy H. Huang

    发明人： Sunil Shanker ,  Chi-I Lang ,  Minh Anh Nguyen ,  Judy H. Huang

    IPC分类号： H01L21/31

    CPC分类号： C23C16/045 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32165 ,  H01L21/31604

    摘要： This invention relates to electronic device fabrication for making devices such as semiconductor wafers and resolves the detrimental fluorine loading effect on deposition in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features with a repeating dep/etch/dep process. The detrimental fluorine loading effect in the chamber on deposition uniformity is reduced and wafers are provided having less deposition thickness variations by employing the method using a passivation treatment and precoating of the chamber before substrates are processed. In a preferred process, after each wafer of a batch is finished, the passivation steps are repeated. In a further preferred process, after all the wafers of a batch are finished, the passivation and precoat procedure is repeated. A preferred passivation gas is a mixture of hydrogen and oxygen.

    摘要翻译： 本发明涉及用于制造诸如半导体晶片的器件的电子器件制造，并且解决了用于形成具有高纵横比，窄宽度凹陷特征的电介质层的HDP CVD设备的反应室中沉积的有害氟负载效应，具有重复的dep / etch / dep进程。 通过采用钝化处理的方法和在处理基板之前对涂层进行涂布，在沉积均匀性方面降低了室中对有害的氟负载效应并提供具有较小沉积厚度变化的晶片。 在优选的方法中，在批次的每个晶片完成之后，重复钝化步骤。 在另一优选方法中，在批料的所有晶片完成之后，重复钝化和预涂步骤。 优选的钝化气体是氢和氧的混合物。