- 专利标题： Field effect transistor with narrow bandgap source and drain regions and method of fabrication
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申请号： US14465636申请日： 2014-08-21
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公开(公告)号： US09048314B2公开(公告)日： 2015-06-02
- 发明人: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- 申请人： Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L29/267 ; H01L29/10 ; H01L29/20 ; H01L29/423 ; H01L29/51
摘要：
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.