Invention Grant
- Patent Title: Activated gas injector, film deposition apparatus, and film deposition method
- Patent Title (中): 活性气体注入器,成膜装置和成膜方法
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Application No.: US12547648Application Date: 2009-08-26
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Publication No.: US09053909B2Publication Date: 2015-06-09
- Inventor: Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
- Applicant: Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-222740 20080829; JP2009-061605 20090313; JP2009-172948 20090724
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/505 ; C23C16/509 ; H01J37/32 ; C23C16/455 ; C23C16/452 ; C23C16/458 ; C23C16/06 ; C23C16/22 ; H01J1/00

Abstract:
An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
Public/Granted literature
- US20100055347A1 ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD Public/Granted day:2010-03-04
Information query
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